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Vishay Schottky Diode 60 V 8 A Single 3-Pin Surface Mount TO-277 Package V8PM6-M3/H
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.2mm |
| Length | 6.65mm |
| Model | V8PM6-M3/H |
| Width | 4.75mm |
| Mount Type | Surface |
| Series | V8PX |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-277 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 8A |
| Peak Reverse Repetitive Voltage Vrrm | 60V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 14mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A |
| Maximum Forward Voltage Vf | 0.64V |
Key Features
- Features low forward voltage drop of 0.64 V for efficient power conversion.
- Supports a maximum continuous forward current of 8 A.
- Peak reverse repetitive voltage is rated at 60 V for reliable operation.
- Built with a Trench MOS Barrier Schottky technology ensuring low leakage current.
- Operates over a wide temperature range from -40°C to 175°C.
- Peak non-repetitive forward surge current capability of 140 A.
- Complies with RoHS and automotive AEC-Q101 standards.
- Ideal for high frequency inverters, freewheeling diodes, DC/DC converters, and polarity protection.
Product Description
Vishay V8PM6-M3/H Schottky diode is a surface mount electronic component offered in a TO-277 package with three pins. It supports a maximum forward current of 8 A and withstands peak repetitive voltages up to 60 V, making it suitable for various power electronics applications. This diode utilizes Trench MOS Barrier Schottky technology, providing fast switching speeds and low forward voltage drop of 0.64 V, which enhances overall efficiency by reducing power losses.
The diode features a peak non-repetitive forward surge current rating of 140 A, which enables it to handle sudden high current spikes effectively. It operates over a broad temperature range from -40°C to 175°C, ensuring reliability in harsh industrial and automotive environments. Compliance with RoHS and the automotive AEC-Q101 standard further confirms its quality and environmental friendliness.
Compact dimensions of 6.65 mm length, 4.75 mm width, and 1.2 mm height allow for seamless integration into densely packed PCB layouts. Vishay's manufacturing ensures consistent quality and supports automated placement processes, ideal for industrial, automotive, and commercial semiconductor applications.
Low forward voltage drop and power losses improve energy efficiency. High current surge capability protects circuits during transient events. Wide operating temperature range suits industrial and automotive systems. RoHS and automotive standard certifications guarantee compliance and reliability.
Compact TO-277 package supports space-efficient PCB design. Suitable for inverters, DC/DC converters, polarity protection, and freewheeling applications.
This Vishay diode is a new, high-performance component designed for demanding electronics in industrial, automotive, laboratory, and manufacturing environments. It fits well in semiconductor diode categories requiring robust, low-loss Schottky Diodes. Explore additional Vishay products and semiconductor components on EnvMart to find compatible electronic parts that optimize your designs.
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Frequently Asked Questions
The maximum continuous forward current for this model is 8 A.
It is rated for a peak reverse repetitive voltage of 60 V.
The forward voltage drop is 0.64 V, which aids in efficient power conversion.
This diode operates over a wide temperature range from -40°C to 175°C.
The diode has a peak non-repetitive forward surge current capability of 140 A.
It comes in a TO-277 package, which is suitable for surface mounting.
It complies with RoHS and automotive AEC-Q101 standards.
This model has a total of 3 pins.
The diode has a height of 1.2 mm and a width of 4.75 mm.
It is suitable for high frequency inverters, freewheeling diodes, DC/DC converters, and polarity protection.
It utilizes Trench MOS Barrier Schottky technology, which ensures low leakage current.
The country of origin for this diode is China.
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