Microchip Split Gate 32 MB SPI Flash Memory 8-Pin WDFN SST26VF032B-104I/MF

Microchip SST26VF032B-104I/MF is a high-performance 32 MB SPI Flash Memory device in an 8-pin WDFN package, designed for embedded applications requiring reliable, low power, and fast memory solutions. Featuring a split gate cell type and an SPI interface, this flash memory IC supports fast clock speeds up to 104 MHz and provides exceptional erase times with sector and block erase commands typically completing in 18 ms, and full chip erase in 35 ms.

Equipped with a nibble-wide multiplexed I/O and low power consumption of 15 mA during active read and just 15 μA in standby mode, this device is ideal for compact and power-sensitive industrial, automotive, and consumer electronics applications. Its robust temperature tolerance from -40°C to 85°C and compliance with automotive standard AEC-Q100 ensure reliable function across demanding environments.

The 8-pin WDFN surface mount package offers ease of integration on space-constrained PCBs, with compact dimensions of 6 mm length, 6 mm width, and 750 μm height. The device supports standard SPI commands while providing low-latency execute-in-place capability through Microchip’s SQI interface technology, enhancing system responsiveness.

Applications include industrial machinery controls, automotive electronics systems, consumer devices, and data storage modules requiring reliable non-volatile memory. The SST26VF032B-104I/MF combines efficient power management and robust performance, meeting rigorous quality and automotive standards for enhanced lifespan and function.

Offers 32MB memory size suitable for embedded systems. Supports Serial Peripheral Interface (SPI) protocol for flexible communication. Compact 8-pin WDFN surface-mount package for efficient PCB integration. Operates at a maximum clock frequency of 104 MHz ensuring fast data access.

Low voltage operation between 2.7V and 3.6V ensures compatibility with modern electronics. Energy-efficient with typical active read current of 15 mA and standby current of 15 μA. Wide operating temperature range from -40°C to 85°C for industrial environments.

Split Gate cell architecture provides high reliability and fast erase times. Complies with automotive standard AEC-Q100 ensuring robustness. Fast erase times with sector/block erase typically in 18 ms and full chip erase in 35 ms.

This Flash Memory device is a reliable choice for industrial, automotive, laboratory, and manufacturing applications requiring compact non-volatile memory solutions. Explore more Microchip semiconductor components and memory ICs in the EnvMart catalogue for your project needs.