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Microchip Split Gate 32 MB SPI Flash Memory 8-Pin WDFN SST26VF032B-104I/MF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 750μm |
| Length | 6mm |
| Cell Type | Split Gate |
| Model | SST26VF032B-104I/MF |
| Width | 6mm |
| Mount Type | Surface |
| Series | SST26VF032B |
| Maximum Operating Temperature | 85°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -40°C |
| Memory size | 32MB |
| Interface Type | SPI |
| Pin Count | 8 |
| Automotive Standard | AEC-Q100 |
| Maximum Supply Voltage | 3.6V |
| Minimum Supply Voltage | 2.7V |
| Supply Current | 20mA |
| Maximum Clock Frequency | 104MHz |
| Organisation | 4M x 8 bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 3ns |
| Number of Words | 4M |
Key Features
- 32 MB memory size with 4M x 8 bit organisation for reliable data storage.
- Supports SPI interface with x1/x2/x4 SPI protocols for flexible communication.
- Compact 8-pin WDFN surface mount package measuring 6 mm by 6 mm for space-efficient designs.
- Operating voltage range from 2.7 V to 3.6 V ensures wide compatibility with low power consumption.
- Temperature range from -40°C to 85°C suitable for industrial and automotive applications.
- Split Gate cell technology improves performance and endurance.
- Maximum clock frequency of 104 MHz enables fast data access and transfer.
- Fast erase times of typically 18 ms for sectors/blocks and 35 ms for entire chip erase.
Product Description
Microchip SST26VF032B-104I/MF is a high-performance 32 MB Serial Quad I/O (SQI) Split Gate Flash Memory IC housed in an 8-Pin WDFN surface mount package (6 mm x 6 mm x 0.75 mm height).
This device offers a SPI interface supporting x1, x2, and x4 protocols enabling flexible serial communications with maximum clock speed up to 104 MHz, ideal for fast data throughput applications.
The Flash Memory chip operates over a voltage range of 2.7 V to 3.6 V and is designed for robust performance over a wide operating temperature range of -40°C to 85°C making it suitable for industrial and automotive use.
Utilizing Microchip's Split Gate cell architecture, it delivers improved erase times with sector/block erase completed typically within 18 ms and full chip erase within 35 ms, significantly faster than many conventional Flash alternatives.
Featuring low power consumption with active read currents around 20 mA and a standby current of only 15 µA, it is optimized for battery-powered and low energy systems. The device is compliant with the automotive industry standard AEC-Q100, ensuring reliable operation in rugged environments.
Applications of the SST26VF032B-104I/MF include embedded systems, industrial controls, automotive infotainment, and other high-reliability memory storage uses where execute-in-place functionality and fast access times are required.
32 MB memory size with 4M x 8 bit organisation. High-speed SPI interface with up to 104 MHz clock frequency. 8-Pin WDFN surface mount package for compact PCB layouts. Wide operating voltage from 2.7 V to 3.6 V. Operating temperature range -40°C to 85°C suitable for industrial and automotive applications.
Fast erase times: sector/block erase in 18 ms, chip erase in 35 ms. Low power consumption with typical active and standby currents. AEC-Q100 automotive standard certification. Supports execute-in-place (XIP) capability for efficient code execution.
Explore more in our Flash Memory category at EnvMart to find compatible components and related semiconductor products for advanced electronic designs.
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Frequently Asked Questions
The SST26VF032B-104I/MF has a memory size of 32 MB, organized as 4M x 8 bits.
It supports a maximum clock frequency of 104 MHz, allowing for fast data access and transfer.
The SPI interface supports x1, x2, and x4 protocols for flexible communication options.
The operating voltage range is from 2.7 V to 3.6 V, ensuring compatibility with various low power applications.
This flash memory operates within a temperature range of -40°C to 85°C, making it suitable for industrial and automotive applications.
It comes in an 8-Pin WDFN package, with dimensions of 6 mm x 6 mm and a height of 750 μm.
Sector/block erase is typically completed in 18 ms, while a full chip erase takes about 35 ms.
The typical supply current during operation is around 20 mA, with a standby current of only 15 µA.
Yes, it is compliant with the AEC-Q100 automotive standard, ensuring reliable operation in rugged environments.
It utilizes Split Gate cell technology, which enhances performance and endurance compared to conventional Flash alternatives.
This model is suitable for applications in embedded systems, industrial controls, and automotive infotainment where fast access times are required.
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