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Microchip Split Gate 16 MB Quad-SPI Flash Memory 8-Pin WDFN SST26VF016B-104I/MF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 800μm |
| Length | 6mm |
| Cell Type | Split Gate |
| Model | SST26VF016B-104I/MF |
| Width | 5mm |
| Mount Type | Surface |
| Series | SST26 |
| Maximum Operating Temperature | 85°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -40°C |
| Memory size | 16MB |
| Interface Type | Quad-SPI |
| Pin Count | 8 |
| Automotive Standard | AEC-Q100 |
| Maximum Supply Voltage | 3.6V |
| Minimum Supply Voltage | 2.7V |
| Maximum Clock Frequency | 104MHz |
| Organisation | 2M x 8 Bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 8ns |
| Number of Words | 2M |
Key Features
- The device features a Split Gate cell type with a memory size of 16MB.
- It supports Quad-SPI interface with 8 pins in a WDFN package type.
- Maximum clock frequency reaches up to 104 MHz, enabling fast data access.
- Operating voltage range is from 2.7V to 3.6V for versatile applications.
- Temperature tolerance ranges from -40°C to 85°C, suitable for industrial use.
- The package dimensions measure 6 mm by 5 mm with a height of 800 μm.
- It supports low power consumption with active read current at 15 mA typical and standby at 15 μA.
- The memory supports sector and block erase commands with fast typical erase times of 18 ms and full chip erase in 35 ms.
Product Description
Microchip SST26VF016B-104I/MF is a high-performance 16 MB Quad-SPI Flash Memory device designed for low power and fast operation in compact semiconductor applications.
This Flash Memory uses Split Gate cell technology and offers a wide operating voltage range from 2.7V to 3.6V with a maximum clock frequency of 104 MHz, supporting high-speed data transfer through a Serial Quad I/O (SQI) interface compatible with standard SPI protocols.
The device is packaged in an 8-Pin WDFN surface mount package with dimensions 6 mm length, 5 mm width, and 800 μm height, making it well-suited for compact and high-density PCB layouts.
Designed for industrial and automotive applications, it withstands operating temperatures from -40°C up to 85°C and conforms to the stringent AEC-Q100 automotive standard for reliability and quality assurance.
Microchip's SuperFlash® technology enables exceptional erase times with typical 18 ms for sector or block erase and 35 ms for full chip erase, enhancing production efficiency and system responsiveness.
The device supports low power consumption modes, with an active read current of typically 15 mA and a standby current of 15 μA. The 2M x 8 bit organisation and 8 ns maximum random access time ensure fast access to stored data.
Flexible erase capability and full command-set compatibility with SPI make integration straightforward across various applications. Typical use cases include embedded systems, industrial controls, automotive electronics, and other high-reliability memory storage solutions.
This Flash Memory is ideal for engineers and designers requiring robust, high-speed non-volatile storage in a compact form factor. Explore the Electronics & Electricals > Semiconductor > Flash Memory category on EnvMart for this and related Microchip memory solutions.
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Frequently Asked Questions
The SST26VF016B-104I/MF has a memory size of 16MB.
It supports a Quad-SPI interface, allowing for high-speed data transfer.
The maximum clock frequency reaches up to 104 MHz, enabling fast data access.
The operating voltage range is from 2.7V to 3.6V.
The package dimensions measure 6 mm in length, 5 mm in width, and 800 μm in height.
It can operate within a temperature range from -40°C to 85°C, making it suitable for industrial applications.
The active read current is typically 15 mA, and the standby current is 15 μA.
This model uses surface mount technology for installation.
Typical erase times are 18 ms for sector or block erase and 35 ms for full chip erase.
It conforms to the AEC-Q100 automotive standard for reliability and quality assurance.
The memory is organized as 2M x 8 bits, allowing for efficient data storage.
The maximum random access time is 8 ns, ensuring quick access to stored data.
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