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Microchip Split Gate 1 MB Parallel Multi-Purpose Flash Memory 32-Pin TSOP SST39SF010A-70-4C-WHE
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 1.05mm |
| Length | 8.1mm |
| Cell Type | Split Gate |
| Model | SST39SF010A-70-4C-WHE |
| Width | 12.5mm |
| Mount Type | Surface |
| Series | SST39 |
| Maximum Operating Temperature | 70°C |
| Package Type | TSOP |
| Minimum Operating Temperature | 0°C |
| Memory size | 1MB |
| Interface Type | Parallel |
| Standards/Approvals | RoHS, JEDEC |
| Pin Count | 32 |
| Maximum Supply Voltage | 5.5V |
| Minimum Supply Voltage | 4.5V |
| Organisation | 128K x 8 bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 70ns |
| Number of Words | 128k |
| Timing Type | Asynchronous |
| Chip-Erase Time | 70 MS (typical) |
| Microchip 1MB Parallel Flash Memory 32-Pin TSOP, SST39SF010A-70-4I-WHEBrand | Microchip |
Key Features
- Memory size of 1 MB organized as 128K x 8 bit for versatile applications.
- Operates with a parallel interface and asynchronous timing for flexible integration.
- Split gate cell architecture supporting sector-erase capability in uniform 4 Kbyte sectors.
- Operating voltage ranges from 4.5V to 5.5V with low active and standby current consumption.
- Designed for surface mounting with a compact 32-pin TSOP package measuring 12.5mm width by 8.1mm length.
- Wide operating temperature from 0°C to 70°C suitable for standard industrial environments.
- Fast read access time of 55 to 70 ns and typical chip erase time of 70 ms.
- Compliance with RoHS and JEDEC standards ensuring environmental safety and compatibility.
Product Description
Microchip SST39SF010A-70-4C-WHE is a split gate multi-purpose Parallel SuperFlash® Memory IC with a 1 MB memory size. It is designed for applications requiring reliable non-volatile storage with fast access times and low power consumption.
This 32-pin Thin Small Outline Package (TSOP) device supports a parallel interface providing asynchronous timing operation. The split gate cell structure enables efficient sector erase functionality, dividing the memory into uniform 4 Kbyte sectors. It operates over a voltage range of 4.5V to 5.5V with typical active current of 10 mA and standby current of 30 μA, optimizing power usage for embedded systems.
The device features endurance of 100,000 cycles, making it suitable for frequent write and erase operations in industrial, embedded systems, telecommunications, and consumer electronics. The operating temperature range spans from 0°C to 70°C, supporting moderate industrial conditions.
Additional performance characteristics include a maximum random access time of 70 ns, typical chip erase time of 70 ms, and byte program time of 14 μs. It includes features such as automatic write timing with internal VPP generation and end-of-write detection through toggle bit and data polling methods. TTL I/O compatibility and JEDEC standard pinouts ensure ease of integration into various designs.
The product complies with RoHS and JEDEC standards, emphasizing environmental compliance and industry interoperability. Its compact form factor supports surface mount technology (SMT), facilitating automated board assembly.
Memory organized as 128K x 8 bits. Maximum supply voltage of 5.5V and minimum of 4.5V. Package dimensions of 12.5mm width, 8.1mm length, and 1.05mm height provide compact design. Typical programming and erase times provide efficiency in embedded applications.
This flash memory device is ideal for industrial controls, embedded computing, telecommunications infrastructure, and consumer electronic products requiring dependable, fast, and low-power memory solutions.
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Frequently Asked Questions
The memory size of this model is 1 MB, organized as 128K x 8 bits.
It operates within a voltage range of 4.5V to 5.5V.
The maximum random access time is 70 ns.
This device supports a parallel interface with asynchronous timing.
The package dimensions are 12.5 mm in width, 8.1 mm in length, and 1.05 mm in height.
The typical chip erase time is 70 ms.
It operates within a temperature range of 0°C to 70°C.
It has an endurance of 100,000 cycles, suitable for frequent write and erase operations.
The memory is organized as 128K x 8 bits.
The typical active current is 10 mA and the standby current is 30 μA.
It complies with RoHS and JEDEC standards, ensuring environmental safety and compatibility.
This model is designed for surface mounting (SMT).
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