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ISSI 1 MB Asynchronous SRAM Memory, 64K x 16 bit Organisation, 10ns Access Time, Surface Mount TSOP IS61WV6416DBLL-10TLI
Specifications
| Country of Origin | India |
|---|---|
| Brand | ISSI |
| Height | 1.05mm |
| Length | 18.54mm |
| Model | IS61WV6416DBLL-10TLI |
| Width | 10.29mm |
| Mount Type | Surface |
| Series | IS61WV6416DBLL |
| Maximum Operating Temperature | 85°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -40°C |
| Memory size | 1MB |
| Pin Count | 44 |
| Maximum Supply Voltage | 3.6V |
| Minimum Supply Voltage | 2.4V |
| Organisation | 64K x 16 bit |
| Number of Bits per Word | 16 |
| Maximum Random Access Time | 10ns |
| Number of Words | 64K |
| Timing Type | Asynchronous |
| Packages available | BGA, SOJ, SOP, sTSOP, TSOP |
| Configuration choice available | x8 and x16 |
Key Features
- The memory supports surface mount technology with TSOP packaging for compact footprint.
- Operates asynchronously with supply voltage range of 2.4V to 3.6V.
- Extensive operating temperature range from -40°C to 85°C suitable for industrial applications.
- Supports x8 and x16 configuration choices across various package types including BGA, SOJ, SOP, sTSOP, and TSOP.
- Built using high-performance CMOS technology targeting low power consumption and reliability.
- Ideal for uses in CPU cache memory, embedded processors, hard drive cache, switches, and industrial electronics.
Product Description
ISSI IS61WV6416DBLL-10TLI is a 1 MB Static Random Access Memory (SRAM) device characterized by asynchronous timing and 64K x 16 bit organisation, achieving a maximum random access time of 10 nanoseconds. It is designed with a surface mount TSOP package type, offering a compact 18.54mm length, 10.29mm width, and 1.05mm height form factor. The device operates over a supply voltage range from 2.4V minimum to 3.6V maximum, supporting power supply options of 1.8V, 3.3V, and 5V across multiple packages.
The ISSI SRAM utilizes advanced CMOS technology ensuring high-speed, low-power operation suitable for performance-critical applications in industrial electronics, embedded processors, and CPU cache memories. Its asynchronous timing type enables compatibility with a variety of control systems requiring flexible access cycles.
Operating temperature extends from -40°C to 85°C, making it appropriate for harsh industrial environments. Package variants including BGA, SOJ, SOP, sTSOP, and TSOP provide design flexibility, while configuration options of x8 and x16 allow adaptation to different system requirements.
This SRAM is ideal for applications such as CPU cache memory enhancement, embedded system buffers, hard disk cache memory, and switching devices within industrial electronic devices. The product does not carry automotive standards certification and adheres to standard quality parameters.
The device is built with CMOS technology for low power consumption. Offers versatile package options to suit various PCB layouts. Specifications include asynchronous timing type and 10ns max random access time. Robust operating temperature range supports industrial and commercial uses.
Configuration choices x8 and x16 tailor memory to application needs. Suitable for use in CPU cache, embedded processors, and switches. Explore the extensive range of ISSI semiconductor memory components for electrics and industrial applications available on EnvMart.
Explore more products in our SRAM Memory category.
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Frequently Asked Questions
The maximum random access time for the ISSI IS61WV6416DBLL-10TLI SRAM memory is 10 nanoseconds.
This SRAM operates within a temperature range of -40°C to 85°C, making it suitable for industrial applications.
The supply voltage range for the ISSI IS61WV6416DBLL-10TLI is from 2.4V to 3.6V.
The memory organization of this SRAM is 64K x 16 bits, meaning it has 64K words with 16 bits each.
This SRAM is available in several package types including BGA, SOJ, SOP, sTSOP, and TSOP.
The ISSI IS61WV6416DBLL-10TLI supports configuration choices of x8 and x16.
The dimensions of this SRAM are 18.54mm in length, 10.29mm in width, and 1.05mm in height.
This SRAM memory chip has a pin count of 44.
The ISSI IS61WV6416DBLL-10TLI utilizes asynchronous timing, allowing for flexible access cycles.
This SRAM is ideal for applications such as CPU cache memory, embedded processors, hard drive cache, and industrial electronics.
The ISSI IS61WV6416DBLL-10TLI SRAM is manufactured in India.
This SRAM is built using high-performance CMOS technology, targeting low power consumption and reliability.
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