Microchip Split Gate 2 MB Parallel Flash Memory 32-Pin PDIP SST39SF020A-70-4C-PHE

Microchip SST39SF020A-70-4C-PHE is a high-performance 2 MB Parallel Flash Memory device packaged in a 32-Pin PDIP with split gate cell technology. Designed for asynchronous operation at supply voltages between 4.5 V and 5.5 V, this memory IC offers reliable and fast read/write cycles.

Featuring a memory organization of 256k x 8 bits, it supports chip-erase times of approximately 70 ms, sector-erase capability with 4 Kbyte sectors, and endurance of 100,000 cycles typical. The device operates efficiently with a supply current of 25 mA and provides a maximum random access time of 70 ns, making it suitable for a wide range of industrial, laboratory, and embedded systems applications.

Its through-hole PDIP package simplifies mounting on standard circuit boards, while the operating temperature range from 0°C to 70°C ensures stable performance in common environmental conditions.

2 MB memory size organized as 256k x 8 bits. Split gate cell architecture for enhanced efficiency. Through-hole PDIP 32-pin package for easy installation. Wide supply voltage range from 4.5 V to 5.5 V. Low power consumption with 25 mA active current.

70 ns maximum random access time for speedy data access. Supports asynchronous timing and sector erase with 4 Kbyte sectors. Typical chip-erase time of 70 ms. Endurance rated for 100,000 write/erase cycles. Operates reliably within 0°C to 70°C.

This Flash Memory device is well suited for electronic applications requiring stable, fast non-volatile storage, including industrial electronics, embedded devices, and communication equipment.

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