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Microchip Split Gate 2 MB Parallel Flash Memory 32-Pin PDIP SST39SF020A-70-4C-PHE
Specifications
| Country of Origin | Thailand |
|---|---|
| Brand | Microchip |
| Height | 3.81mm |
| Length | 42.04mm |
| Cell Type | Split Gate |
| Model | SST39SF020A-70-4C-PHE |
| Width | 13.97mm |
| Mount Type | Through Hole |
| Series | SST39SF020A |
| Maximum Operating Temperature | 70°C |
| Package Type | PDIP |
| Minimum Operating Temperature | 0°C |
| Memory size | 2MB |
| Interface Type | Parallel |
| Pin Count | 32 |
| Maximum Supply Voltage | 5.5V |
| Minimum Supply Voltage | 4.5V |
| Supply Current | 25mA |
| Organisation | 256k x 8 Bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 70ns |
| Number of Words | 256K |
| Timing Type | Asynchronous |
| Chip-Erase Time | 70 ms (typical) |
| Microchip 2MB Parallel Flash Memory 32-Pin PDIP, SST39SF020A-70-4C-PHEBrand | Microchip |
Key Features
- 2 MB memory size with 256k x 8 bit organization for efficient data storage.
- Split Gate cell technology enhances performance and reliability.
- Through-hole PDIP package with 32 pins suitable for easy mounting.
- Supports 70 ns maximum random access time for fast data retrieval.
- Operating temperature range from 0°C to 70°C ensures durability in typical environments.
- Low power consumption with active current at 25 mA optimizes energy efficiency.
- Asynchronous timing type for compatibility with standard systems.
- Includes sector-erase capability with uniform 4 Kbyte sectors for flexible memory management.
Product Description
Microchip SST39SF020A-70-4C-PHE is a high-performance 2 MB Parallel Flash Memory device packaged in a 32-Pin PDIP with split gate cell technology. Designed for asynchronous operation at supply voltages between 4.5 V and 5.5 V, this memory IC offers reliable and fast read/write cycles.
Featuring a memory organization of 256k x 8 bits, it supports chip-erase times of approximately 70 ms, sector-erase capability with 4 Kbyte sectors, and endurance of 100,000 cycles typical. The device operates efficiently with a supply current of 25 mA and provides a maximum random access time of 70 ns, making it suitable for a wide range of industrial, laboratory, and embedded systems applications.
Its through-hole PDIP package simplifies mounting on standard circuit boards, while the operating temperature range from 0°C to 70°C ensures stable performance in common environmental conditions.
2 MB memory size organized as 256k x 8 bits. Split gate cell architecture for enhanced efficiency. Through-hole PDIP 32-pin package for easy installation. Wide supply voltage range from 4.5 V to 5.5 V. Low power consumption with 25 mA active current.
70 ns maximum random access time for speedy data access. Supports asynchronous timing and sector erase with 4 Kbyte sectors. Typical chip-erase time of 70 ms. Endurance rated for 100,000 write/erase cycles. Operates reliably within 0°C to 70°C.
This Flash Memory device is well suited for electronic applications requiring stable, fast non-volatile storage, including industrial electronics, embedded devices, and communication equipment.
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Frequently Asked Questions
The memory size of this model is 2 MB, organized as 256k x 8 bits.
It has a maximum random access time of 70 ns, allowing for fast data retrieval.
This unit operates within a supply voltage range of 4.5 V to 5.5 V.
It comes in a 32-pin PDIP (Plastic Dual In-line Package) format, suitable for through-hole mounting.
The active current consumption is 25 mA, optimizing energy efficiency during operation.
The operating temperature range is from 0°C to 70°C, ensuring stable performance in typical environments.
It is rated for an endurance of 100,000 write/erase cycles, providing reliable memory management.
The typical chip-erase time is approximately 70 ms, allowing for efficient memory management.
It supports asynchronous timing, making it compatible with standard systems.
The dimensions are 42.04 mm in length, 13.97 mm in width, and 3.81 mm in height.
The memory organization is 256k x 8 bits, allowing for efficient data storage.
It utilizes split gate cell technology, which enhances performance and reliability.
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