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Microchip 4 MB EPROM Memory Chip 40-Pin PDIP, 256K x 16 Bit, OTP Reprogramming, 90ns Access Time AT27C4096-90PU
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 4.8mm |
| Length | 52.5mm |
| Model | AT27C4096-90PU |
| Width | 13.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 85°C |
| Package Type | PDIP |
| Minimum Operating Temperature | -40°C |
| Memory size | 4MB |
| Interface Type | Parallel |
| Pin Count | 40 |
| Maximum Supply Voltage | 5.5V |
| Minimum Supply Voltage | 4.5V |
| Supply Current | 100μA |
| Organisation | 256 k x 16 Bit |
| Number of Bits per Word | 16 |
| Maximum Random Access Time | 90ns |
| Number of Words | 256K |
| Reprogramming Technique | OTP |
| Microchip 4Mbit EPROM 40-Pin PDIPBrand | Atmel |
Key Features
- One Time Programmable (OTP) EPROM with no window for erasing or reprogramming.
- Memory organization of 256K x 16 bits supporting a 4 MB capacity.
- Parallel interface with a maximum random access time of 90ns for fast data retrieval.
- Operating voltage range from 4.5 V minimum to 5.5 V maximum.
- Designed for operating temperatures from -40°C to 85°C.
- Supply current is low at 100 μA, suitable for efficient power consumption.
- Pin count of 40 pins in a PDIP package enables secure mounting on PCB.
Product Description
Microchip AT27C4096-90PU is a 4 MB One Time Programmable (OTP) EPROM memory chip designed with a 40-pin Plastic Dual In-Line Package (PDIP) for through hole mounting.
This EPROM offers a memory organisation of 256K x 16 bits, delivering a total capacity of 4 MB. It features a parallel interface maximizing data transfer efficiency and a fast random access time of 90 nanoseconds.
With a wide operating voltage range between 4.5 V and 5.5 V and a robust operating temperature range from -40°C to 85°C, this chip is suitable for various industrial and embedded electronic applications requiring reliable non-volatile memory.
The package dimension of 52.5 mm length, 13.9 mm width, and 4.8 mm height ensures compatibility with standard PCB layouts. The 40-pin PDIP format supports through hole mounting, facilitating durable assembly for prototyping and production.
Power consumption is optimized with a low supply current of 100 μA, making this a good choice for low power embedded systems. The device is OTP, meaning it cannot be erased once programmed, which provides permanent data storage essential for firmware or calibration data in various applications.
One Time Programmable EPROM technology offers secure, permanent data storage. Parallel interface and fast 90ns access time provide efficient memory performance. Robust operating voltage and temperature range enables reliability across industrial environments.
40-pin PDIP package for easy through hole mounting on PCBs. Low power consumption at 100 μA supports energy efficient designs.
This Microchip EPROM is widely used in industrial electronics, embedded systems, design development, and other semiconductor applications requiring dependable non-volatile memory components.
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Frequently Asked Questions
This model features a memory organization of 256K x 16 bits, providing a total capacity of 4 MB.
The maximum random access time for this EPROM is 90 nanoseconds, allowing for fast data retrieval.
It operates within a voltage range of 4.5 V minimum to 5.5 V maximum.
The package dimensions are 52.5 mm in length, 13.9 mm in width, and 4.8 mm in height.
This unit utilizes a parallel interface for data transfer, maximizing efficiency.
The supply current is low at 100 μA, making it suitable for energy-efficient designs.
It is designed to operate within a temperature range of -40°C to 85°C.
This model is designed for through hole mounting, which facilitates secure assembly on PCBs.
The AT27C4096-90PU employs a One Time Programmable (OTP) technique, meaning it cannot be erased once programmed.
This EPROM has a total of 40 pins in its PDIP package.
The country of origin for this memory chip is India.
This model is suitable for various industrial and embedded electronic applications requiring reliable non-volatile memory.
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