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Vishay P-Channel MOSFET 50 A, 40 V Enhancement Mode, 3-Pin TO-252 Package SUD50P04-08-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 2.38mm
Length 6.73mm
Model SUD50P04-08-GE3
Width 6.22mm
Mount Type Surface
Series SUD50P04-08
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 50A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 10mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 73.5W
Typical Gate Charge Qg @ Vgs 106nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.8V

Key Features

  • Designed for enhancement mode operation ensuring high efficiency.
  • Compact 3-pin TO-252 package suitable for surface mounting applications.
  • Maximum power dissipation rated at 73.5 W for reliable thermal performance.
  • Low drain-source resistance of 10 mΩ reduces conduction losses.
  • Operating temperature range from -55°C to 150°C accommodates harsh environments.
  • Typical gate charge of 106 nC helps in fast switching and reduced losses.
  • Maximum gate-source voltage of ±20 V ensures robust gate control.
  • Forward voltage drop of -0.8 V to optimize conduction efficiency.

Product Description

The Vishay SUD50P04-08-GE3 is a high-performance P-Channel MOSFET transistor designed for power switching applications. It supports a maximum continuous drain current of 50 amperes with a drain-source voltage rating of 40 volts, making it suitable for demanding electronic circuits requiring efficient switching and power handling.

This MOSFET features an enhancement mode channel and is provided in a TO-252 surface mount package with three pins, facilitating easy integration on printed circuit boards. The low maximum drain-source resistance of 10 milliohms lowers conduction losses, enhancing overall efficiency.

With a power dissipation capability of 73.5 watts, it can operate reliably under significant load conditions. Its operating temperature range from -55°C to 150°C ensures dependable performance in industrial, automotive, and commercial electronic environments.

The typical gate charge of 106 nanocoulombs allows for rapid switching speeds while minimizing switching losses, and the device supports a maximum gate-source voltage of -20 to +20 volts, providing robust gate drive capability. The forward voltage drop is specified at -0.8 volts, contributing to efficient operation in power circuits.

Compact physical dimensions, 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height, facilitate installation in space-constrained applications. This MOSFET does not carry automotive certifications but is designed to suit high-performance electronic applications in industrial, manufacturing, and power management sectors.

Designed for high current and voltage switching applications. Compact TO-252 surface mount packaging for PCB integration. High power dissipation supports heavy load operations. Wide temperature tolerance suitable for harsh conditions.

Low Rds(on) value reduces energy losses and heatsink requirements. Supports enhancement mode for precise control. Robust gate voltage rating ensures safe and effective switching. Typical gate charge optimized for efficient switching speed.

Reliable forward voltage characteristics for performance consistency.

Perfect for industrial and power management electronic designs requiring durable and efficient MOSFET components. Explore more Vishay semiconductor products and other power electronic components on EnvMart.

Vishay P-Channel MOSFET 50 A, 40 V Enhancement Mode, 3-Pin TO-252 Package SUD50P04-08-GE3
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Frequently Asked Questions

The maximum continuous drain current for the Vishay SUD50P04-08-GE3 is 50 amperes.

This model has a maximum drain-source voltage rating of 40 volts.

It supports a maximum power dissipation of 73.5 watts, allowing reliable operation under significant load conditions.

The operating temperature range for the SUD50P04-08-GE3 is from -55°C to 150°C.

The maximum drain-source resistance is rated at 10 milliohms, which helps to reduce conduction losses.

The typical gate charge is 106 nanocoulombs, which aids in achieving fast switching speeds.

The forward voltage drop is specified at -0.8 volts, optimizing conduction efficiency.

It comes in a 3-pin TO-252 surface mount package, suitable for PCB integration.

The maximum gate-source voltage is rated at ±20 volts, providing robust gate control.

The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.

This model features a P-channel enhancement mode, designed for efficient switching applications.

This MOSFET does not carry automotive certifications but is designed for high-performance electronic applications in industrial and power management sectors.

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