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Infineon HEXFET N-Channel MOSFET & Diode 86 A 30 V Enhancement Mode 3-Pin TO-252 IRFR3709ZTRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFR3709ZTRLPBF |
| Width | 2.39mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 86A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 6.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports enhancement mode with a 3-pin surface mount TO-252 package.
- Features a low maximum drain-source resistance of 6.5 milliohms.
- Maximum power dissipation rated at 79 W for reliable thermal handling.
- Operates over a temperature range from -55 °C to 175 °C for industrial applications.
- Typical gate charge of 26 nanocoulombs at Vgs for efficient switching.
- Maximum gate-source voltage of 20 V ensures device protection.
- Forward diode voltage of approximately 1 V for integrated diode function.
- Compact dimensions of 6.73 mm length, 6.22 mm height, and 2.39 mm width.
Product Description
Infineon IRFR3709ZTRLPBF is a high-performance HEXFET N-Channel MOSFET with an integrated diode designed for power switching and amplification applications. It supports a maximum continuous drain current of 86 A and a drain-source voltage rating of 30 V, making it suitable for various industrial and electronic applications requiring efficient power management.
Its enhancement mode operation and surface mount TO-252 package provide compactness and ease of integration into modern electronic assemblies. With a low maximum drain-source resistance of 6.5 milliohms, this device ensures minimal conduction losses, thus improving overall system efficiency.
The device features a maximum power dissipation of 79 W, supporting effective thermal management in demanding environments. Its operating temperature range from -55 °C to 175 °C enables use in harsh industrial and automotive settings.
The typical gate charge of 26 nanocoulombs at gate-source voltage facilitates fast switching speed and reduced switching losses. The maximum allowable gate-source voltage of 20 V provides reliability and durability in gate drive scenarios.
The integrated forward diode with a voltage drop of approximately 1 V adds versatility for power conversion and motor control applications. This MOSFET’s compact dimensions (length 6.73 mm, height 6.22 mm, width 2.39 mm) allow dense layout on PCBs.
Supports enhancement mode with a 3-pin surface mount TO-252 package. Low maximum drain-source resistance improves efficiency. High current rating suitable for motor control and power supply applications. Wide operating temperature range for industrial and automotive uses.
Integrated diode enables flexible circuit design. Compact package size suitable for space-constrained applications.
This Infineon HEXFET MOSFET is ideal for use in switching power supplies, battery management systems, motor drives, and inverter circuits in industrial, automotive, and consumer electronics sectors.
Explore the Electronics & Electricals category at EnvMart for reliable Infineon semiconductor components and Discrete Semiconductors like this MOSFET.
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Frequently Asked Questions
The maximum continuous drain current for this model is 86 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The maximum power dissipation rated for this model is 79 W.
It operates over a temperature range from -55 °C to 175 °C.
The typical gate charge at gate-source voltage (Vgs) is 26 nanocoulombs.
The maximum gate-source voltage is 20 V, which ensures device protection.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in height, and 2.39 mm in width.
This model supports surface mounting.
The maximum drain-source resistance is 6.5 milliohms.
Yes, it features an integrated diode with a forward voltage of approximately 1 V.
This MOSFET is suitable for power switching and amplification applications, including motor control and power supply applications.
The channel type of this model is N-channel.
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