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Infineon RF Bipolar Transistor 50 mA NPN 4 V 4-Pin SOT-343 BF776H6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BF776H6327XTSA1 |
| Mount Type | Surface |
| Series | BF776 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-343 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-Free (RoHS) |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 4V |
| Minimum DC Current Gain hFE | 180 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 1.2V |
| Maximum Collector Base Voltage VCBO | 13V |
| Maximum Power Dissipation Pd | 200mW |
| Maximum DC Collector Current Idc | 50mA |
| Maximum Transition Frequency ft | 46GHz |
Key Features
- Maximum DC collector current of 50 mA suitable for RF applications.
- NPN transistor polarity with a package type of compact SOT-343.
- Features a maximum transition frequency of 46 GHz enabling high speed operation.
- Low noise figure approximately 0.8 dB at 1.8 GHz for signal clarity.
- Surface mount design with 4 pin count providing easy PCB integration.
- Maximum power dissipation rated at 200 mW ensuring reliable performance.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- RoHS compliant Pb-free construction supporting environmental standards.
Product Description
The Infineon BF776H6327XTSA1 is a high-performance RF Bipolar NPN transistor optimized for low noise amplification and high frequency operation. It supports a maximum DC collector current of 50 mA and maximum collector emitter voltage of 4 V, packaged within a compact SOT-343 surface mount form factor with 4 pins for minimal footprint.
Boasting a maximum transition frequency of 46 GHz, this transistor enables effective amplification at microwave frequencies, making it ideal for wireless communication applications. The device also delivers a low typical noise figure of 0.8 dB at 1.8 GHz, ensuring minimal signal distortion and enhanced overall system sensitivity.
The transistor supports wide operating temperatures ranging from -55°C up to +150°C, ensuring robust performance in demanding industrial, telecommunications, and defense environments. Its maximum power dissipation rating of 200 mW allows it to handle RF power requirements reliably.
This product is RoHS compliant with a Pb-free package, aligning with modern environmental standards. It is suited for use in WLAN, WiMax, UWB, Bluetooth, GPS receivers, satellite radios, digital audio broadcasting (DAB), low noise block converters (LNBs), UMTS/LTE base stations, and ISM band applications.
High frequency low noise amplifier transistor for RF signal applications. Compact SOT-343 package with surface mount technology for easy PCB layout. Supports automotive and consumer wireless communication systems. Complies with RoHS environmental directives.
Explore more Infineon Bipolar Transistors and RF semiconductors in the EnvMart catalog to meet your electronic design needs.
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Frequently Asked Questions
The maximum DC collector current for this NPN transistor is 50 mA.
The maximum collector emitter voltage (Vceo) is 4 V.
It has a maximum transition frequency of 46 GHz, enabling high-speed operation.
The typical noise figure at 1.8 GHz is approximately 0.8 dB, which helps ensure signal clarity.
This model operates within a temperature range of -55°C to 150°C.
The package type is SOT-343, designed for surface mount applications.
The maximum power dissipation is rated at 200 mW.
This transistor features a 4-pin configuration.
It is suitable for wireless communication applications, including WLAN, Bluetooth, and GPS receivers.
The minimum DC current gain (hFE) is 180.
Yes, it is RoHS compliant with a Pb-free construction, supporting environmental standards.
The maximum emitter base voltage (VEBO) is 1.2 V.
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