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STMicroelectronics 1200 V 10 A Ultra-High Performance Silicon Carbide Schottky Diode 2-Pin TO-263 D2PAK STPSC10H12G2Y-TR

Category Schottky Diode Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 4.3mm
Length 15.95mm
Model STPSC10H12G2Y-TR
Width 10.4mm
Mount Type Surface
Series STPSC10H12G2Y-TR
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -40°C
Pin Count 2
Maximum Continuous Forward Current If 10A
Peak Reverse Repetitive Voltage Vrrm 1200V
Diode Configuration Single
Peak Reverse Current Ir 30μA
Peak Non-Repetitive Forward Surge Current Ifsm 60A
Maximum Forward Voltage Vf 2.25V

Key Features

  • The diode features a peak reverse repetitive voltage of 1200 V providing high voltage tolerance.
  • It supports a maximum continuous forward current of 10 A for robust power handling.
  • Manufactured using silicon carbide substrate, offering low forward voltage and fast switching.
  • Operates reliably from -40 °C to 175 °C for demanding industrial environments.
  • The diode exhibits negligible reverse recovery, minimizing switching losses and EMI.
  • Housed in a D2PAK HV package, ideal for power factor correction and DC/DC converter applications.
  • Peak non-repetitive forward surge current is 60 A, ensuring robustness under transient load conditions.
  • Designed for use in automotive, industrial, and EV on-board charger systems requiring durable rectification.

Product Description

STMicroelectronics STPSC10H12G2Y-TR is an ultra-high performance silicon carbide (SiC) Schottky diode rated at 1200 V and 10 A. It features a 2-pin TO-263 (D2PAK) surface-mount package optimized for power electronic applications requiring high efficiency and robust performance.

Constructed on a silicon carbide substrate, this diode offers a wide bandgap technology enabling low forward voltage drop of 2.25 V and minimized switching losses with no reverse recovery. Its switching behavior is consistent and temperature-insensitive, suitable for demanding industrial and automotive environments operating from -40 °C to 175 °C.

The device supports a peak continuous forward current of 10 A and a peak non-repetitive forward surge current of 60 A. Its peak reverse repetitive voltage is rated at 1200 V with low peak reverse current of 30 μA ensuring stable rectification performance.

Its robust high-voltage periphery and minimized capacitive turn-off characteristics reduce ringing and EMI, making it an excellent choice for power factor correction (PFC), on-board chargers (OBC), and DC/DC conversion in electric vehicles and industrial power supplies.

The compact D2PAK HV package facilitates thermal management and compact PCB layout designs. The diode exhibits no or negligible reverse recovery, enhancing switching efficiency. AEC-Q101 qualified, ensuring reliability in automotive applications.

Temperature range from -40 °C to 175 °C supports harsh environmental conditions. Robust surge current capacity enhances transient robustness. Package type TO-263 (D2PAK) enables surface mounting with effective heat dissipation.

The product conforms to relevant reliability and safety standards without specific approvals.

This STMicroelectronics STPSC10H12G2Y-TR diode is ideal for industrial, automotive, electric vehicle, and renewable energy systems requiring efficient, high-voltage rectification components.

Explore more Schottky Diode components and semiconductor solutions in the Electronics & Electricals category on EnvMart.

STMicroelectronics 1200 V 10 A Ultra-High Performance Silicon Carbide Schottky Diode 2-Pin TO-263 D2PAK STPSC10H12G2Y-TR
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Frequently Asked Questions

The diode has a peak reverse repetitive voltage of 1200 V, providing high voltage tolerance for various applications.

It supports a maximum continuous forward current of 10 A, ensuring robust power handling capabilities.

This model operates reliably from -40 °C to 175 °C, making it suitable for demanding industrial environments.

The maximum forward voltage drop is 2.25 V, which contributes to its efficiency in power applications.

It is housed in a TO-263 (D2PAK) surface-mount package, optimized for effective thermal management and compact PCB layouts.

The diode can handle a peak non-repetitive forward surge current of 60 A, enhancing its robustness under transient load conditions.

The peak reverse current is rated at 30 μA, ensuring stable rectification performance.

This model features a 2-pin configuration, suitable for various electronic applications.

Yes, it is AEC-Q101 qualified, ensuring reliability in automotive applications.

It is designed for use in automotive, industrial, and electric vehicle on-board charger systems requiring efficient rectification.

The dimensions are 15.95 mm in length, 10.4 mm in width, and 4.3 mm in height.

This model has a single diode configuration, making it suitable for various rectification tasks.

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