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Vishay 60 V 10 A Surface Mount Schottky Diode 2-Pin TO-277 V10PM63-M3/H
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.2mm |
| Length | 6.65mm |
| Model | V10PM63-M3/H |
| Width | 4.75mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-277 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 2 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 10A |
| Peak Reverse Repetitive Voltage Vrrm | 60V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 5mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 180A |
| Maximum Forward Voltage Vf | 0.65V |
Key Features
- This diode offers ultra low forward voltage drop of 0.42 V at 5 A for reduced power loss.
- It incorporates Trench MOS Barrier Schottky technology for high current density and efficiency.
- The package type is TO-277, with 2 pins for surface mount integration.
- Maximum operating temperature is 175°C, suitable for demanding environments.
- Diode is RoHS compliant and meets automotive AEC-Q101 standard for reliability.
- It has a peak reverse current of 5 mA and peak surge forward current of 180 A.
- The compact dimensions of 6.65 mm length, 4.75 mm width, and 1.2 mm height enable low-profile mounting.
Product Description
Vishay V10PM63-M3/H is a surface mount Schottky diode designed for power and electronic applications requiring high efficiency, low forward voltage, and reliable operation up to 175°C. It features a maximum continuous forward current of 10 A and peak reverse repetitive voltage rating of 60 V, making it suitable for circuits such as low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection.
The diode utilises Trench MOS Barrier Schottky technology, delivering an ultra low forward voltage of 0.42 V at 5 A, thereby reducing power losses and enhancing efficiency in switching power supplies and related industrial electronics.
Packaged in a TO-277 surface mount package with a 2-pin configuration, this diode offers a compact solution with dimensions of 6.65 mm length, 4.75 mm width, and a low profile height of 1.2 mm.
Designed for robust performance, it supports a peak non-repetitive forward surge current of 180 A and operates across a wide temperature range from -40°C to 175°C. Additional reliability is ensured through compliance with RoHS and the automotive qualification standard AEC-Q101.
This diode offers ultra low forward voltage drop of 0.42 V at 5 A for reduced power loss. It incorporates Trench MOS Barrier Schottky technology for high current density and efficiency. The package type is TO-277, with 2 pins for surface mount integration.
Maximum operating temperature is 175°C, suitable for demanding environments. Diode is RoHS compliant and meets automotive AEC-Q101 standard for reliability. It has a peak reverse current of 5 mA and peak surge forward current of 180 A.
The compact dimensions of 6.65 mm length, 4.75 mm width, and 1.2 mm height enable low-profile mounting.
This Schottky diode is widely used across electronics manufacturing, automotive electronics, industrial power systems, HVAC control boards, and DC/DC converter designs where high efficiency and reliability are critical.
Explore more Vishay semiconductor components and Schottky diodes on EnvMart for robust industrial and automotive applications.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current for this model is 10 A.
It has a peak reverse repetitive voltage rating of 60 V.
The forward voltage drop at 5 A is 0.42 V.
The dimensions of the TO-277 package are 6.65 mm in length, 4.75 mm in width, and 1.2 mm in height.
The maximum operating temperature is 175°C.
The minimum operating temperature is -40°C.
The peak non-repetitive forward surge current is 180 A.
The peak reverse current rating is 5 mA.
Yes, this diode is RoHS compliant.
It meets the automotive AEC-Q101 standard for reliability.
This model has a single diode configuration.
It incorporates Trench MOS Barrier Schottky technology for high current density and efficiency.
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