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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 15.9mm |
| Model | STGW100H65FB2-4 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | STG |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-4 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Maximum Continuous Collector Current Ic | 145A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 441W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
STMicroelectronics STGW100H65FB2-4 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) offering a maximum continuous collector current of 145 A and a collector-emitter voltage rating of 650 V. Packaged in a robust TO-247-4 through-hole mount, this transistor supports power dissipation up to 441 W, making it suitable for demanding power electronic applications.
The device features an advanced trench gate field-stop technology optimized for improved conduction with a low collector-emitter saturation voltage of 2 V, enhancing efficiency at low current values. It supports fast switching speeds up to 1 MHz, ideal for high-frequency power conversion and drive circuits.
With a gate-emitter voltage maximum of 20 V, the IGBT offers reliable gate control and minimized tail current. It operates reliably in a wide temperature range from -55°C to 175°C, suitable for diverse industrial and automotive environments, although it does not meet automotive standards.
The dimensions of the package are 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height, suited for through-hole PCB assembly. The product complies with RoHS standards for hazardous substance restriction.
This transistor is ideal for use in industrial power supplies, motor drives, inverters, and fast-switching power circuits requiring high efficiency and thermal stability. Its low thermal resistance and tight parameter distribution contribute to a robust and predictable design.
The device features a TO-247-4 package suitable for through-hole mounting. Maximum power dissipation is 441 W enabling robust thermal performance. N-channel channel type ensures fast switching and low saturation voltage.
Designed for operating temperatures ranging from -55°C up to 175°C. Maximum gate-emitter voltage is rated at 20 V for reliable gate control. Package dimensions are 15.9 mm length, 21.1 mm width, and 5.1 mm height. Rated switching speed is up to 1 MHz allowing for high-frequency operation.
Complies with RoHS standards ensuring environmental safety. Explore EnvMart’s extensive range of semiconductor components for advanced industrial and electronic applications.
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