Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

STMicroelectronics N-Channel IGBT 650 V 145 A 441 W TO-247-4 Package Through Hole Mount STGW100H65FB2-4

Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 5.1mm
Length 15.9mm
Model STGW100H65FB2-4
Width 21.1mm
Mount Type Through Hole
Series STG
Maximum Operating Temperature 175°C
Package Type TO-247-4
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 4
Maximum Continuous Collector Current Ic 145A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Channel Type N
Maximum Power Dissipation Pd 441W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • The device features a TO-247-4 package suitable for through-hole mounting.
  • Maximum power dissipation is 441 W enabling robust thermal performance.
  • N-channel channel type ensures fast switching and low saturation voltage.
  • Designed for operating temperatures ranging from -55°C up to 175°C.
  • Maximum gate-emitter voltage is rated at 20 V for reliable gate control.
  • Package dimensions are 15.9 mm length, 21.1 mm width, and 5.1 mm height.
  • Rated switching speed is up to 1 MHz allowing for high-frequency operation.
  • Complies with RoHS standards ensuring environmental safety.

Product Description

STMicroelectronics STGW100H65FB2-4 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) offering a maximum continuous collector current of 145 A and a collector-emitter voltage rating of 650 V. Packaged in a robust TO-247-4 through-hole mount, this transistor supports power dissipation up to 441 W, making it suitable for demanding power electronic applications.

The device features an advanced trench gate field-stop technology optimized for improved conduction with a low collector-emitter saturation voltage of 2 V, enhancing efficiency at low current values. It supports fast switching speeds up to 1 MHz, ideal for high-frequency power conversion and drive circuits.

With a gate-emitter voltage maximum of 20 V, the IGBT offers reliable gate control and minimized tail current. It operates reliably in a wide temperature range from -55°C to 175°C, suitable for diverse industrial and automotive environments, although it does not meet automotive standards.

The dimensions of the package are 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height, suited for through-hole PCB assembly. The product complies with RoHS standards for hazardous substance restriction.

This transistor is ideal for use in industrial power supplies, motor drives, inverters, and fast-switching power circuits requiring high efficiency and thermal stability. Its low thermal resistance and tight parameter distribution contribute to a robust and predictable design.

The device features a TO-247-4 package suitable for through-hole mounting. Maximum power dissipation is 441 W enabling robust thermal performance. N-channel channel type ensures fast switching and low saturation voltage.

Designed for operating temperatures ranging from -55°C up to 175°C. Maximum gate-emitter voltage is rated at 20 V for reliable gate control. Package dimensions are 15.9 mm length, 21.1 mm width, and 5.1 mm height. Rated switching speed is up to 1 MHz allowing for high-frequency operation.

Complies with RoHS standards ensuring environmental safety. Explore EnvMart’s extensive range of semiconductor components for advanced industrial and electronic applications.

STMicroelectronics N-Channel IGBT 650 V 145 A 441 W TO-247-4 Package Through Hole Mount STGW100H65FB2-4
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous collector current for this IGBT is 145 A.

The maximum collector-emitter voltage rating is 650 V.

This model has a maximum power dissipation of 441 W, enabling robust thermal performance.

The package dimensions are 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height.

The rated switching speed of this IGBT is up to 1 MHz, allowing for high-frequency operation.

The maximum gate-emitter voltage is rated at 20 V for reliable gate control.

It operates reliably in a temperature range from -55°C to 175°C.

This model supports through-hole mounting with a TO-247-4 package.

The IGBT features an N-channel type, which ensures fast switching and low saturation voltage.

This device complies with RoHS standards for hazardous substance restriction.

It is suitable for use in industrial power supplies, motor drives, inverters, and fast-switching power circuits requiring high efficiency and thermal stability.

The maximum collector-emitter saturation voltage is 2 V, enhancing efficiency at low current values.

Related Products

Other Products from this brand

Recently Viewed Products

$10.75
$10.43 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$10.75
$10.43
Tax included