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onsemi 400 V 3 A Schottky Diode Through Hole 2-Pin DO-41 1N5404RLG

Category Semiconductor Diode Brand onsemi Condition New

Specifications

Country of Origin China
Diameter 5.3mm
Brand onsemi
Length 9.5mm
Model 1N5404RLG
Mount Type Through Hole
Series 1N5404
Maximum Operating Temperature 150°C
Package Type DO-41
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Continuous Forward Current If 3A
Peak Reverse Repetitive Voltage Vrrm 400V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 50μA
Peak Non-Repetitive Forward Surge Current Ifsm 200A
Maximum Forward Voltage Vf 1V
onsemi 400V 3A, Silicon Junction Diode, 2-Pin DO-201AD 1N5404GBrand ON Semiconductor
Fairchild 400V 3A, Silicon Junction Diode, 2-Pin DO-201AD 1N5404Brand Fairchild Semiconductor

Key Features

  • This diode features a peak reverse repetitive voltage of 400 V.
  • It supports a maximum continuous forward current of 3 amperes.
  • The maximum forward voltage drop is 1 V ensuring efficient rectification.
  • Its operating temperature ranges from -65°C up to 150°C for versatile applications.
  • The peak non-repetitive forward surge current is rated at 200 A.
  • The component dimensions measure 9.5 mm in length and 5.3 mm in diameter.
  • The diode configuration is single with two pins for through-hole mounting.
  • This device is designed for rectifier uses and has a low peak reverse current of 50 μA.

Product Description

onsemi 1N5404RLG is a high-performance Schottky diode designed for reliable rectification in diverse electronic and industrial applications. Rated for a maximum continuous forward current of 3 A and a reverse voltage of 400 V, this diode supports robust operation within a wide temperature range from -65°C to 150°C.

Housed in a compact through-hole 2-pin DO-41 package, the diode enables easy integration into printed circuit boards and power electronics assemblies. Its low forward voltage drop of 1 V aids in efficient power conversion, reducing energy loss during operation.

The diode is capable of handling peak non-repetitive forward surge currents up to 200 A, making it suitable for transient load conditions. The single diode configuration and a peak reverse current of only 50 μA ensure stable and low leakage performance.

With a length of 9.5 mm and a diameter of 5.3 mm, the component offers a compact footprint.

This Schottky diode is ideal for applications in power rectification, power supplies, switching circuits, and other industrial electronic equipment including manufacturing and laboratory devices. Its durable design ensures resilience in demanding environments.

This diode features a peak reverse repetitive voltage of 400 V. It supports a maximum continuous forward current of 3 amperes. The maximum forward voltage drop is 1 V ensuring efficient rectification. Its operating temperature ranges from -65°C up to 150°C for versatile applications.

The peak non-repetitive forward surge current is rated at 200 A. The component dimensions measure 9.5 mm in length and 5.3 mm in diameter. The diode configuration is single with two pins for through-hole mounting. This device is designed for rectifier uses and has a low peak reverse current of 50 μA.

The package type is DO-41, suitable for various industrial and electronic assemblies. Explore our extensive Semiconductor Diode range at EnvMart for high-quality and reliable electronic components suitable for all professional applications.

onsemi 400 V 3 A Schottky Diode Through Hole 2-Pin DO-41 1N5404RLG
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Frequently Asked Questions

The diode has a peak reverse repetitive voltage of 400 V.

It supports a maximum continuous forward current of 3 A.

The component measures 9.5 mm in length and 5.3 mm in diameter.

The maximum forward voltage drop is 1 V, which aids in efficient rectification.

The operating temperature ranges from -65°C to 150°C.

It is rated for a peak non-repetitive forward surge current of 200 A.

This diode has a configuration of two pins for through-hole mounting.

It utilizes a through-hole mounting type.

The peak reverse current is rated at 50 μA.

The diode is housed in a DO-41 package type.

This model is designed for rectifier uses and is suitable for applications in power rectification, power supplies, and switching circuits.

The country of origin for this diode is China.

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