Infineon HEXFET N-Channel Power MOSFET 150A, 30V, Enhancement Mode, 3-Pin TO-220 IRLB8743PBF

Infineon IRLB8743PBF HEXFET N-Channel Power MOSFET is designed for high current handling and low conduction losses, featuring a maximum continuous drain current of 150 amperes and a maximum drain-source voltage of 30 volts. This enhancement-mode MOSFET comes in a durable 3-pin TO-220 package suitable for through-hole mounting on printed circuit boards.

With a low maximum drain-source resistance of 3 milliohms and a forward voltage drop of 1 volt, this device ensures efficient power switching, meeting the needs of power management, motor control, and industrial applications.

The device supports a typical gate charge of 36 nanocoulombs at gate-source voltage, reducing switching losses in high-frequency circuits. Its power dissipation capability up to 140 watts allows operation under demanding thermal conditions.

Operating temperature ranges from -55°C to 175°C make this MOSFET suitable for a variety of environments, including automotive and industrial sectors. The package dimensions facilitate easy board layout integration without sacrificing performance.

Infineon's HEXFET series is known for power efficiency, high reliability, and robust design, meeting stringent quality standards. This product is manufactured in Mexico under strict quality controls, ensuring compliance with industrial requirements.

The device operates in enhancement mode for efficient switching. Maximum power dissipation rating of 140 watts ensures high reliability in demanding applications. Low typical gate charge of 36 nanocoulombs minimizes switching losses.

Maximum drain-source resistance of 3 milliohms reduces conduction losses and improves efficiency. Wide operating temperature range from -55°C to 175°C supports industrial and automotive environments. Forward voltage of 1 volt provides optimized performance for power circuits.

Through-hole mounting style enables secure mechanical and electrical connection on PCBs. Compact TO-220 package with dimensions approximately 10.67mm length, 4.83mm width, and 9.02mm height. Manufactured in Mexico following standard industrial quality controls.

This Infineon HEXFET N-Channel MOSFET is ideal for electronic circuitry requiring high current capacity and low conduction loss, such as power supplies, motor drivers, switch mode power supplies, and industrial automation systems. Explore more semiconductor components and power MOSFETs for optimized electronic design at EnvMart.