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Wolfspeed N-Channel MOSFET, 19 A, 1200 V Enhancement, 3-Pin TO-247 C2M0160120D
Specifications
| Country of Origin | China |
|---|---|
| Brand | Wolfspeed |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | C2M0160120D |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 196mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -5, +20V |
| Forward Voltage Vf | 3.9V |
Key Features
- Features enhancement-mode N-channel SiC technology ensuring high efficiency and power density.
- Supports a maximum continuous drain current of 19 A for demanding power applications.
- Offers high voltage tolerance up to 1200 V with a drain-source resistance of 196 mΩ.
- Designed with a 3-pin TO-247 through-hole package suitable for easy mounting and thermal management.
- Operates reliably in extreme temperature ranges from -55°C to 150°C.
- Maximum power dissipation is 125 W, allowing efficient heat handling.
- Exhibits low typical gate charge of 34 nC facilitating fast switching speeds.
- Gate-source voltage range is from -5 V to +20 V ensuring robust gate control.
Product Description
Wolfspeed's C2M0160120D is an N-channel enhancement-mode Silicon Carbide (SiC) MOSFET designed to deliver superior power density and switching efficiency. With a maximum continuous drain current of 19 A and a maximum drain-source voltage of 1200 V, this device is tailored for industrial and power electronics applications requiring robust and high-performance semiconductors.
The device is housed in a sturdy 3-pin TO-247 package, facilitating through-hole mounting and excellent thermal dissipation. Its low on-resistance of 196 mΩ and low typical gate charge of 34 nC enables high-speed switching and reduced energy losses, boosting overall system efficiency.
Operating temperature ranges from -55°C up to a maximum of 150°C allows this MOSFET to perform reliably in harsh environmental conditions, making it suitable for automotive, industrial power supplies, and renewable energy systems.
The gate-source voltage operating range of -5 V to +20 V and a forward voltage of 3.9 V ensure precise control and efficient conduction during switching cycles. Its compact physical dimensions support integration into a variety of PCB designs while maintaining mechanical robustness.
Wolfspeed's advancements in SiC MOSFET technology provide latch-up resistant operation and ease of paralleling multiple devices, further enhancing system scalability and reliability.
Enhancement-mode N-channel SiC technology enables high power density. High drain-source breakup voltage and low Rds(on) improve efficiency. Designed for fast switching with low gate charge and low forward voltage. Wide operating temperature range for harsh industrial environments.
Solid mechanical 3-pin TO-247 package for heat dissipation and mounting.
This MOSFET is widely used across industrial, automotive, renewable energy, and power management applications. Its reliable performance and robust design make it a preferred choice for power electronics engineers.
Explore more Wolfspeed semiconductor products on EnvMart to enhance your power electronic designs with high-quality components.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 19 A.
It has a maximum drain-source voltage rating of 1200 V.
The typical gate charge is 34 nC, which facilitates fast switching speeds.
This model uses a 3-pin TO-247 package type, suitable for through-hole mounting.
It operates reliably in temperature ranges from -55°C to 150°C.
The maximum power dissipation is 125 W, allowing for efficient heat handling.
The drain-source resistance is 196 mΩ, contributing to its efficiency.
The gate-source voltage range is from -5 V to +20 V, ensuring robust gate control.
The dimensions are 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width.
It is widely used in industrial, automotive, renewable energy, and power management applications.
The forward voltage for this device is 3.9 V.
This model features an N-channel enhancement mode.
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