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onsemi Power NPN Transistor 1.2 A Collector Current 160 V TO-126 Package KSC2690AYS

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 27.26mm
Length 8mm
Model KSC2690AYS
Width 3.25mm
Mount Type Through Hole
Series KSC2690A
Maximum Operating Temperature 150°C
Package Type TO-126
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 160V
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 1.2A
Transistor Configuration Single
Maximum Transition Frequency ft 155MHz

Key Features

  • This transistor is designed for through-hole mounting and has a single transistor configuration.
  • It supports a maximum power dissipation of 20 W, suitable for moderate power applications.
  • The NPN transistor polarity enables it for switching and amplification in electronic circuits.
  • It has a minimum DC current gain (hFE) of 60 and a maximum transition frequency of 155 MHz, suitable for high-frequency operations.
  • The device operates within a temperature range up to 150°C, supporting reliable performance under high thermal stress.
  • Compact dimensions of 27.26 mm height, 8 mm length, and 3.25 mm width aid in PCB space efficiency.
  • This transistor complies with no specific standards or automotive certifications.
  • It features a maximum collector base voltage and emitter base voltage of 160 V and 5 V respectively, ensuring robust junction tolerances.

Product Description

onsemi KSC2690AYS Power NPN Transistor is a discrete bipolar junction transistor (BJT) designed for electronic, industrial, and power control applications. It is housed in a TO-126 package, providing a compact form factor suitable for through-hole PCB mounting and applications demanding efficient thermal and electrical performance.

This transistor supports a maximum DC collector current of 1.2 amperes and a maximum collector-emitter voltage of 160 volts, enabling it to operate efficiently in low-to-moderate power switching and amplification scenarios. The device can dissipate up to 20 watts of power, making it suitable for various power electronics designs.

The minimum DC current gain (hFE) of 60 and maximum transition frequency (ft) of 155 MHz allow for use in moderately high-frequency signal amplification and switching circuits. Its NPN polarity is conventionally used in many amplifier and switching circuits. The maximum operating temperature is rated at 150°C, ensuring durability and stable operation under thermal stress conditions common in industrial environments.

Dimensions of 27.26 mm in height, 8 mm length, and 3.25 mm width ensure it occupies minimal PCB space while facilitating heat dissipation. The transistor offers maximum collector base voltage (VCBO) and maximum emitter base voltage (VEBO) of 160 V and 5 V respectively, delivering robust voltage withstand capabilities.

This device is not certified for automotive standards, but its reliable performance and specifications make it suitable for various industrial electronics, power management, and control applications. It is widely used in power supply circuits, motor control, and general-purpose amplification.

This transistor supports a maximum collector current of 1.2 A. Maximum collector-emitter voltage is rated at 160 V. Power dissipation capability is 20 W. Minimum current gain (hFE) of 60 ensures consistent amplification.

Transition frequency (ft) reaches up to 155 MHz. Compact TO-126 package for through-hole mounting. Operating temperature limit is 150°C for durability. Single NPN transistor configuration for versatile use. Explore more Bipolar Transistors and electronic components at EnvMart for various industrial, manufacturing, and electronic design needs.

onsemi Power NPN Transistor 1.2 A Collector Current 160 V TO-126 Package KSC2690AYS
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Frequently Asked Questions

The maximum DC collector current for the KSC2690AYS is 1.2 A.

This model has a maximum collector-emitter voltage rating of 160 V.

The KSC2690AYS can dissipate up to 20 W of power.

The minimum DC current gain (hFE) for this transistor is 60.

The maximum transition frequency for this transistor is 155 MHz.

The dimensions of the KSC2690AYS are 27.26 mm in height, 8 mm in length, and 3.25 mm in width.

This model is designed for through-hole mounting.

The maximum operating temperature for the KSC2690AYS is rated at 150°C.

This transistor features a single NPN transistor configuration.

The maximum collector base voltage (VCBO) for the KSC2690AYS is 160 V.

The maximum emitter base voltage (VEBO) for this model is 5 V.

This transistor is not certified for automotive standards.

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