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DiodesZetex N-Channel MOSFET 2.7 A 30 V Enhancement 3-Pin SOT-323 DMN3061SWQ-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model DMN3061SWQ-7
Width 1.35mm
Mount Type Surface
Series DMN3061SWQ
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 2.7A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 600mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 0.65W
Typical Gate Charge Qg @ Vgs 3.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Surface mount MOSFET with a 3-pin SOT-323 package.
  • Enhancement mode channel type for efficient switching.
  • Maximum drain-source resistance of 600 milliohms ensures low power loss.
  • Maximum power dissipation rating of 0.65 watts suitable for compact power circuits.
  • Wide operating temperature range from -55°C to 150°C enhances reliability.
  • Typical gate charge of 3.5 nC enables fast switching speeds.
  • Compliant with the automotive standard AEC-Q101 for quality assurance.
  • Compact dimension with length 2.2 mm, width 1.35 mm, and height 1.1 mm.

Product Description

The DiodesZetex DMN3061SWQ-7 is a high-performance N-Channel MOSFET, well-suited for load switching, power management, and analogue switching applications within electronic circuits.

This device supports a maximum continuous drain current of 2.7 A and a maximum drain-source voltage of 30 V, providing efficient power handling capabilities for compact electronic modules.

Packaged in a surface mount 3-Pin SOT-323 case, it features enhancement mode operation with a maximum on-resistance of 600 milliohms, which contributes to reduced conduction losses in switching operations.

The MOSFET allows for fast switching with a typical gate charge of 3.5 nC at Vgs, optimizing performance in switching power supplies and other high-frequency circuits.

Operating reliably across a broad temperature range from -55°C to 150°C, it is suitable for use in automotive and industrial environments, further supported by its AEC-Q101 automotive quality compliance.

Its compact physical dimensions, measuring 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, enable high-density PCB layouts while maintaining robust electrical performance.

Surface mount 3-Pin SOT-323 package for space-efficient PCB design. Low gate charge and low on-resistance ensure high efficiency. Thermally robust for demanding industrial and automotive conditions. Applications include load switching, power management, and analogue switching.

Certified for automotive applications under the AEC-Q101 standard. Ideal for industrial, automotive, electronic manufacturing, and power management systems. Enhance your design performance with the DiodesZetex DMN3061SWQ-7 MOSFET.

Explore a wide range of semiconductors and MOSFETs within the Electronics & Electricals category at EnvMart.

DiodesZetex N-Channel MOSFET 2.7 A 30 V Enhancement 3-Pin SOT-323 DMN3061SWQ-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.7 A.

The maximum drain-source voltage is 30 V.

It has a maximum drain-source resistance of 600 milliohms.

The typical gate charge is 3.5 nC at Vgs.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

It operates reliably from -55°C to 150°C.

This model is packaged in a 3-pin SOT-323 surface mount configuration.

Yes, it is compliant with the automotive standard AEC-Q101.

The maximum power dissipation rating is 0.65 watts.

It features an enhancement mode N-channel type.

This model is suitable for load switching, power management, and analogue switching applications.

The maximum gate-source voltage is 20 V.

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