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onsemi PowerTrench N-Channel MOSFET 5 A 150 V Enhancement Mode 3-Pin TO-220 FDP42AN15A0
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 9.4mm |
| Length | 10.67mm |
| Model | FDP42AN15A0 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 42mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
Key Features
- Designed for enhancement mode operation providing efficient switching performance.
- Features a low maximum drain-source resistance of 42 milliohms for reduced conduction losses.
- Capable of handling a maximum power dissipation of 150 W for reliable operation.
- Operates within a temperature range of -55°C to 175°C for diverse environments.
- Equipped with a typical gate charge of 30 nC at rated gate voltage for fast switching.
- Constructed with a PowerTrench series design optimized for power management applications.
- Through-hole mount type with compact TO-220 package dimensions for easy PCB integration.
- Automotive compliant with AEC-Q101 standard for high reliability in automotive electronics.
Product Description
onsemi FDP42AN15A0 PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor device designed for power switching applications. Rated for a maximum continuous drain current of 5 A and a drain-source voltage of 150 V, this transistor operates in enhancement mode to provide efficient switching with low conduction losses due to its 42 milliohm maximum drain-source resistance.
Encased in a robust 3-pin TO-220 package, the device supports through-hole mounting, ensuring ease of use in PCB assemblies. It handles up to 150 watts of power dissipation while maintaining stability over a wide operating temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and power management solutions.
The typical gate charge of 30 nC at the rated gate voltage enables rapid switching, improving circuit efficiency. The MOSFET is compliant with AEC-Q101 automotive standards, assuring reliability in rigorous automotive environments.
Designed for power switching and amplification in industrial and automotive electronics. Compact TO-220 package simplifies integration and thermal management. High power dissipation capability supports demanding load conditions.
Wide temperature tolerance ensures robust performance in harsh environments. Low gate charge facilitates fast and efficient switching operations. Enhancement mode channel type suitable for a variety of DC and pulse applications.
PowerTrench technology offers superior electrical performance and durability. Complies with industry standards for automotive applications.
This MOSFET is ideal for use in power supply circuits, motor control, and other power management modules in industrial, automotive, and electronic systems. Its combination of electrical characteristics and mechanical form factor supports efficient power conversion and control.
Explore more semiconductor components and MOSFETs at EnvMart for your power electronics and industrial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5 A.
It has a maximum drain-source voltage of 150 V.
The typical gate charge at the rated gate voltage is 30 nC.
This MOSFET can handle a maximum power dissipation of 150 W.
The dimensions of the TO-220 package are 10.67 mm in length, 4.83 mm in width, and 9.4 mm in height.
It operates within a temperature range of -55°C to 175°C.
The maximum drain-source resistance is 42 milliohms.
Yes, it is compliant with the AEC-Q101 automotive standard.
This model supports through-hole mounting.
The channel type of this device is N-channel and operates in enhancement mode.
It is designed for power switching and amplification in industrial and automotive electronics, including power supply circuits and motor control.
The maximum gate-source voltage is -20 V to +20 V.
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