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Infineon HEXFET Type P-Channel MOSFET 23A Continuous Drain Current 100V Drain-Source Voltage Enhancement Mode IRFP9140NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP9140NPBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 23A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 117mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 97nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
| P-channel MOSFET,IRFP9140N 23A 100VBrand | International Rectifier |
Key Features
- P-Channel configuration enables flexible circuit designs and power control.
- High maximum continuous drain current of 23A supports demanding applications.
- 100V maximum drain-source voltage improves device safety and robustness.
- Low on-resistance RDS(on) of 117mΩ reduces power loss and improves thermal efficiency.
- Enhancement mode channel operation ensures stable and precise switching.
- TO-247 package provides reliable through-hole mounting and heat dissipation.
- Maximum power dissipation rated at 140W for high-performance applications.
- Wide operating temperature range from -55°C up to 175°C supports harsh environments.
Product Description
Infineon IRFP9140NPBF HEXFET Type P-Channel MOSFET is a high-power discrete semiconductor device optimized for efficient switching in power electronics. Featuring a maximum continuous drain current of 23A and a drain-source voltage rating of 100V, it is ideal for applications requiring reliable and efficient power management.
The device uses enhancement mode operation and is housed in a 3-pin TO-247 through-hole package, offering excellent thermal conductivity and ease of mounting. Its low on-resistance of 117 milliohms minimizes conduction losses and aids in heat management, making it suitable for high-efficiency circuits.
This MOSFET is rated for maximum power dissipation of 140W and can operate reliably under a wide temperature range from -55°C to +175°C, fitting well in challenging industrial, automotive, and energy management applications.
With a typical gate charge of 97nC at 10V gate-source voltage and a maximum gate-source voltage of ±20V, it provides efficient switching performance and flexible design integration. The forward voltage is approximately -1.3V, suitable for power conversion and motor control circuits.
P-Channel HEXFET MOSFET offers flexible circuit topology options. Supports high current and voltage with robust electrical characteristics. Enhanced power dissipation enables use in demanding power conversion tasks. Wide temperature tolerance improves reliability in industrial and automotive systems.
Low RDS(on) minimizes power losses and improves thermal performance. Through-hole TO-247 package facilitates heat sinking and mechanical robustness. Applications include motor control, switching regulators, energy management systems, and power supplies.
This MOSFET suits a variety of sectors including industrial automation, power electronics, and automotive electronics. Its rugged specifications make it an excellent choice for engineers seeking high performance and durable components.
Explore the broad selection of related semiconductor devices and power MOSFETs in EnvMart’s Electronics & Electricals category for your design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 23A.
This MOSFET has a maximum drain-source voltage rating of 100V.
The on-resistance (RDS(on)) of this unit is 117 milliohms.
It is housed in a TO-247 package, which is suitable for through-hole mounting.
The operating temperature range is from -55°C to +175°C.
The maximum power dissipation rated for this MOSFET is 140W.
The typical gate charge at 10V gate-source voltage is 97nC.
The forward voltage is approximately -1.3V.
This model has a pin count of 3.
It uses a P-channel configuration.
This MOSFET is suitable for applications such as motor control, switching regulators, and energy management systems.
The dimensions are 20.3mm in height, 15.9mm in length, and 5.3mm in width.
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