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Vishay N-Channel MOSFET, 375 A Maximum Continuous Drain Current, 40 V Drain Source Voltage, 4-Pin PowerPAK SQJQ148E-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.7mm |
| Length | 8mm |
| Model | SQJQ148E-T1_GE3 |
| Width | 8.1mm |
| Mount Type | Surface |
| Series | SQJQ148E |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerPAK (8x8L) |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 375A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 325W |
| Typical Gate Charge Qg @ Vgs | 69nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Maximum continuous drain current of 375 A for demanding power requirements.
- Drain source voltage rating of 40 V suitable for medium power load circuits.
- Features 4-Pin PowerPAK (8x8L) package offering excellent thermal performance.
- Enhancement type channel with a low maximum drain source resistance of 1.3 milliohms.
- Operates efficiently across a temperature range from -55°C to 175°C.
- Maximum power dissipation capacity of 325 W for robust operation.
- Typical gate charge of 69 nC at Vgs makes for fast switching capability.
- Compliant with automotive AEC-Q101 standards ensuring reliability in automotive environments.
Product Description
The Vishay SQJQ148E-T1_GE3 is an N-Channel MOSFET designed for applications requiring high current and low voltage operation with high efficiency and reliability. The device integrates TrenchFET Gen IV technology which enhances conduction and switching performance.
Featuring a surface mount 4-Pin PowerPAK (8x8L) package, this MOSFET provides very low thermal resistance and a thin 1.7 mm height profile for space-efficient designs. It is capable of handling a maximum continuous drain current of 375 A and a maximum voltage of 40 V between the drain and source terminals.
The device supports a maximum power dissipation of 325 W and operates effectively in a temperature range from -55°C up to 175°C, making it suitable for a broad range of industrial, automotive, and power management applications. The low maximum drain source resistance of 1.3 milliohms contributes to high efficiency and reduced heat generation during operation.
Additional features include a typical gate charge of 69 nC at Vgs, enabling rapid switching speeds which are critical in power electronics circuits. It complies with the automotive AEC-Q101 standard, underscoring its suitability for automotive systems and environments requiring high durability and quality assurance.
This MOSFET is ideal for electronic power amplification, DC-DC converters, motor controllers, and other discrete semiconductor applications where high current and low voltage control are essential.
Maximum continuous drain current of 375 A. Drain source voltage of 40 V. 4-Pin PowerPAK (8x8L) package for optimized thermal management. Enhancement type channel for efficient switching. Operating temperature range of -55°C to 175°C.
Low 1.3 mΩ drain source resistance reduces losses. 325 W maximum power dissipation capacity. Typical gate charge of 69 nC for fast switching. AEC-Q101 qualified for automotive reliability. Discover more components like the SQJQ148E-T1_GE3 in the MOSFET category at EnvMart for industrial, automotive, and power electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 375 A, making it suitable for demanding power requirements.
This MOSFET has a maximum drain source voltage rating of 40 V, which is suitable for medium power load circuits.
It features a 4-Pin PowerPAK (8x8L) package, which provides excellent thermal performance and a compact design.
The device operates efficiently across a temperature range from -55°C to 175°C, accommodating a variety of environmental conditions.
This MOSFET can handle a maximum power dissipation of 325 W, ensuring robust operation in various applications.
The typical gate charge for this model at Vgs is 69 nC, which facilitates fast switching capabilities.
The maximum drain source resistance for this MOSFET is 1.3 milliohms, contributing to high efficiency and reduced heat generation during operation.
It complies with the automotive AEC-Q101 standard, ensuring reliability in automotive environments.
The dimensions of the SQJQ148E-T1_GE3 are 8 mm in length, 8.1 mm in width, and 1.7 mm in height.
This model utilizes an enhancement type channel, which enhances conduction and switching performance.
It is suitable for electronic power amplification, DC-DC converters, motor controllers, and other discrete semiconductor applications requiring high current and low voltage control.
The maximum gate source voltage for this MOSFET is 20 V, which is important for ensuring proper operation within specified limits.
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