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STMicroelectronics N-Channel IGBT TO-247 3-Pin Through Hole 115A 650V STGWA75H65DFB2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 15.9mm |
| Model | STGWA75H65DFB2 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | STG |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 115A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 357W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- High current capability of 115A ensures robust operation under demanding loads.
- Maximum collector emitter voltage rating of 650V supports high voltage applications.
- Package type TO-247 with through hole mounting for easy integration.
- Fast switching speed of up to 1MHz suitable for high-frequency applications.
- Maximum power dissipation of 357W allows handling significant power safely.
- Maximum operating temperature up to 175°C for high-temperature performance.
- Low collector emitter saturation voltage enhances energy efficiency.
- Includes a very fast and soft recovery co-packaged diode to reduce losses.
Product Description
STMicroelectronics STGWA75H65DFB2 is a trench gate field-stop N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Featuring a maximum continuous collector current of 115A and collector emitter voltage rating of 650V, this component is delivered in a TO-247 package with 3 pins and through hole mount type, facilitating easy incorporation into printed circuit boards.
This IGBT provides a maximum power dissipation of 357W and supports switching frequencies up to 1MHz, making it suitable for high-frequency power electronics and industrial control applications. Its low collector emitter saturation voltage, typically 2V maximum, enhances system efficiency by reducing conduction losses under heavy load conditions.
The device operates reliably across a wide temperature range, from -55°C minimum to 175°C maximum, ensuring durability in harsh thermal environments. Additionally, the integrated fast and soft recovery co-packaged diode minimizes tail current effects, improving switching performance and reducing electromagnetic interference.
Dimensions include a length of 15.9 mm, width of 21.1 mm, and height of 5.1 mm. The component is RoHS compliant, underscoring its alignment with environmental and safety regulations.
This N-Channel IGBT is ideal for use in industrial power supplies, motor drives, renewable energy inverters, and other applications requiring efficient, high-power switching devices.
High current capability of 115A ensures robust operation under demanding loads. Maximum collector emitter voltage rating of 650V supports high voltage applications. Package type TO-247 with through hole mounting for easy integration.
Fast switching speed of up to 1MHz suitable for high-frequency applications. Maximum power dissipation of 357W allows handling significant power safely. Maximum operating temperature up to 175°C for high-temperature performance.
Low collector emitter saturation voltage enhances energy efficiency. Includes a very fast and soft recovery co-packaged diode to reduce losses. Compliant with RoHS standards for environmental safety. Ideal for industrial and power electronics applications requiring reliable switching.
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Frequently Asked Questions
The maximum continuous collector current for this model is 115A, ensuring robust operation under demanding loads.
This IGBT has a maximum collector emitter voltage rating of 650V, making it suitable for high voltage applications.
The maximum power dissipation for this unit is 357W, allowing it to handle significant power safely.
The dimensions of this IGBT are 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height.
It comes in a TO-247 package type with a through hole mount, facilitating easy integration into printed circuit boards.
The maximum operating temperature for this IGBT is 175°C, allowing it to perform reliably in high-temperature environments.
The minimum operating temperature for this IGBT is -55°C, ensuring functionality in extreme conditions.
This model supports switching frequencies of up to 1MHz, making it suitable for high-frequency power electronics applications.
It includes a very fast and soft recovery co-packaged diode, which helps to reduce losses and improve switching performance.
Yes, the STGWA75H65DFB2 is RoHS compliant, aligning with environmental and safety regulations.
The maximum collector emitter saturation voltage is typically 2V, which enhances energy efficiency by reducing conduction losses.
This IGBT is ideal for industrial power supplies, motor drives, and renewable energy inverters, requiring efficient, high-power switching devices.
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