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onsemi NPN Power Transistor 8 A 80 V Surface Mount TO-252 Package MJD44H11T4G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 10.41mm
Length 6.73mm
Model MJD44H11T4G
Width 2.38mm
Mount Type Surface
Series MJD44H11
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.75W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single
Maximum Transition Frequency ft 85MHz

Key Features

  • This transistor supports a maximum DC collector current of 8 A.
  • It features an 80 V maximum collector-emitter voltage for robust operation.
  • The device comes in a TO-252 surface mount package with 3 pins.
  • Maximum power dissipation is rated at 1.75 W for reliable thermal management.
  • Minimum DC current gain (hFE) is 60 to ensure amplification efficiency.
  • The transistor polarity is NPN with single transistor configuration.
  • Minimum operating temperature starts from −55°C, with a maximum operating temperature of 150°C.
  • Maximum transition frequency (ft) is 85 MHz for high-speed switching.

Product Description

The onsemi MJD44H11T4G is a robust NPN power transistor engineered to deliver efficient control in switching and amplification applications within various industrial and automotive systems. Its surface mount TO-252 package allows for easy integration on modern PCB assemblies where space optimization is critical.

Characterized by a maximum DC collector current of 8 A and a maximum collector-emitter voltage of 80 V, this transistor offers reliable performance under demanding electrical loads. The device delivers a maximum power dissipation of 1.75 W, ensuring stable operation over extended use.

It features a minimum DC current gain of 60, which guarantees high amplification characteristics suitable for diverse amplifier circuits. The device complies with the stringent AEC-Q101 automotive standard, verifying its suitability in automotive and harsh environment applications.

Operating in temperature ranges from −55°C to 150°C, the MJD44H11T4G is capable of functioning reliably in extreme thermal conditions encountered in industrial equipment and automotive electronics. Its maximum transition frequency of 85 MHz makes it suitable for high-speed switching operations.

With a compact form factor measuring 10.41 mm in height, 6.73 mm in length, and 2.38 mm in width, this transistor supports easy surface mounting with a 3-pin DPAK layout. The single transistor configuration and NPN polarity provide flexibility in circuit design and integration.

This transistor supports a maximum DC collector current of 8 A. It features an 80 V maximum collector-emitter voltage for robust operation. The device comes in a TO-252 surface mount package with 3 pins. Maximum power dissipation is rated at 1.75 W for reliable thermal management.

Minimum DC current gain (hFE) is 60 to ensure amplification efficiency. The transistor polarity is NPN with single transistor configuration. Minimum operating temperature starts from −55°C, with a maximum operating temperature of 150°C.

Maximum transition frequency (ft) is 85 MHz for high-speed switching. Automotive grade compliant to AEC-Q101 standards. Compact dimensions facilitate space-saving PCB design. This component is ideal for use in power amplification, switching power supplies, motor control, and automotive electronics requiring durable, high-frequency capable transistors.

Explore more high-quality semiconductors and electronic components at EnvMart for your next industrial or automotive project.

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onsemi NPN Power Transistor 8 A 80 V Surface Mount TO-252 Package MJD44H11T4G
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Frequently Asked Questions

The maximum DC collector current for the MJD44H11T4G is 8 A.

This model features a maximum collector-emitter voltage of 80 V.

The maximum power dissipation for the MJD44H11T4G is rated at 1.75 W.

The dimensions of the TO-252 package are 10.41 mm in height, 6.73 mm in length, and 2.38 mm in width.

The operating temperature range for this transistor is from -55°C to 150°C.

The minimum DC current gain (hFE) is 60, ensuring effective amplification.

The maximum transition frequency (ft) for the MJD44H11T4G is 85 MHz.

This unit has a single transistor configuration and features NPN polarity.

Yes, it complies with the AEC-Q101 automotive standard, making it suitable for automotive applications.

The TO-252 package has a pin count of 3.

This transistor is suitable for power amplification, switching power supplies, motor control, and automotive electronics.

The MJD44H11T4G is manufactured in India.

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