DiodesZetex N-Channel MOSFET 500 mA 50 V Enhancement SOT-23 DMN53D0L-7

DiodesZetex DMN53D0L-7 is a high-quality N-Channel MOSFET transistor designed for switching and amplification in electronic circuits. Rated for a maximum continuous drain current of 500 mA and a maximum drain-source voltage of 50 V, this device provides reliable performance in compact surface-mount applications. Packaged in a 3-pin SOT-23 form factor, it occupies minimal PCB space while ensuring ease of integration.

The device operates in enhancement mode and supports power dissipation of up to 540 mW. Its maximum drain-source resistance of 4.5 Ω helps reduce conduction losses, improving efficiency in power management. With a typical gate charge of 0.6 nC (measured at gate-source voltage), it supports fast switching, suitable for high-frequency applications.

Designed to operate in harsh environments, the DMN53D0L-7 can withstand temperatures ranging from -55°C to 150°C, making it ideal for automotive and industrial environments. The transistor complies with the AEC-Q101 automotive standard, underlining its reliability for automotive electronics.

The device’s maximum gate-source voltage rating of ±20 V protects the gate from voltage spikes during operation. Its forward voltage drop is 1.4 V, ensuring consistent voltage characteristics during conduction. Mechanical dimensions of 3 mm length, 1.4 mm width, and 1 mm height allow it to fit in compact designs.

This MOSFET transistor is suited for applications in power management, signal switching, and amplification across electronics, automotive, industrial, and consumer devices. Its small package and robust ratings make it an excellent choice for surface-mount PCB designs requiring reliable transistor performance.

The device operates in enhancement mode for efficient switching performance. Features a maximum power dissipation rating of 540 mW ensuring reliable operation. Maximum drain-source resistance of 4.5 Ω maintains low conduction losses.

Supports a wide operating temperature range from -55°C to 150°C for extended environmental tolerance. Typical gate charge of 0.6 nC at Vgs enables fast switching characteristics. Built to AEC-Q101 automotive standard, suitable for automotive electronics designs.

Compact dimensions: 3 mm length, 1.4 mm width, and 1 mm height for minimal PCB footprint. Maximum gate-source voltage withstands ±20 V for robust gate protection. Forward voltage drop is 1.4 V to ensure predictable voltage characteristics.

Explore more DiodesZetex semiconductor products and MOSFETs on EnvMart for high-quality components tailored to various industrial, automotive, and electronics manufacturing needs.