Infineon HEXFET N-Channel MOSFET 50 A 200 V Enhancement Mode 3-Pin TO-247 IRFP260NPBF

Infineon IRFP260NPBF HEXFET N-Channel MOSFET is engineered for high-power, efficient switching applications in various industrial, automotive, and electronic systems. Featuring a 50 A maximum continuous drain current and a 200 V maximum drain-source voltage, it offers reliable performance in power management circuits.

The enhancement mode design provides improved control and switching efficiency, while the low Rds(on) value of 40 milliohms reduces power losses and heat generation, essential for energy-sensitive applications. The device supports power dissipation up to 300 W, enabling it to handle high load conditions effectively.

This MOSFET comes in a TO-247 package type with through-hole mounting that facilitates easy integration into PCB layouts. It operates reliably across a broad temperature range from -55°C up to 175°C, suitable for both harsh industrial environments and automotive electronics.

Its typical gate charge of 234 nC supports fast switching speeds, thus improving overall circuit efficiency. The maximum gate-source voltage rating of ±20 V ensures device protection against voltage spikes.

Key physical dimensions are 15.9 mm length, 5.3 mm width, and 20.3 mm height, making it compact for high-density circuit boards. This MOSFET is ideal for power supply circuits, industrial power control, automotive electronics, and renewable energy systems.

Supports maximum continuous drain current of 50 A for demanding applications. Maximum drain-source voltage rating of 200 V enhances circuit versatility. Enhancement mode operation ensures precise switching control. Low on-resistance (Rds(on)) of 40 milliohms minimizes conduction losses.

TO-247 package with through-hole mounting simplifies installation. Capable of dissipating up to 300 W power for effective thermal management. Wide operating temperature range from -55°C to 175°C for reliability. Gate charge of 234 nC enables efficient switching performance.

Maximum gate-source voltage of ±20 V to protect device integrity. Compact dimensions: length 15.9 mm, width 5.3 mm, height 20.3 mm optimize board space. Explore more Infineon MOSFETs on EnvMart for efficient and reliable power semiconductor solutions.