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Infineon HEXFET N-Channel MOSFET 9.7A 100V Enhancement Mode 3-Pin TO-220 IRF520NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF520NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| Infineon IRF520NPBF N-channel MOSFET, 9.7 A, 100 V HEXFET, 3-Pin TO-220ABBrand | Infineon |
Key Features
- High continuous drain current capacity of 9.7 amperes ensures excellent load handling.
- Low drain-source resistance of 200 milliohms minimizes power dissipation and improves efficiency.
- Fast switching speed supports high-frequency electronic applications.
- Wide operating temperature range from -55°C to 175°C supports extreme environment usage.
- Compact TO-220 package with 3 pins facilitates easy through-hole mounting.
- Designed with advanced HEXFET technology for reliable performance.
- Supports pulsed drain currents up to 38A suitable for transient loads.
- Maximum power dissipation of 48 watts allows robust thermal management.
Product Description
Infineon IRF520NPBF HEXFET N-Channel MOSFET is engineered for demanding power electronics and industrial applications requiring robust switching and load handling capabilities. This device supports a maximum continuous drain current of 9.7 A and withstands a drain-source voltage up to 100 V, operating efficiently in enhancement mode.
The transistor features a low on-resistance of 200 mΩ which reduces heat generation and power loss during operation, making it suitable for automation, motor drive circuits, and high-frequency switching.
Its TO-220 3-pin package allows simple installation on through-hole PCBs and effective heat dissipation with appropriate thermal management. The MOSFET's fast switching characteristics enable use in power management systems and electronic control units.
The device's ability to operate from -55°C up to 175°C also makes it ideal for environments with wide temperature fluctuations, suitable for industrial, automotive, and manufacturing settings.
High current capacity of 9.7A enhances performance and load management. Low 200mΩ drain-source resistance reduces conduction losses. Fast switching speeds improve efficiency in power circuits. Wide -55°C to 175°C operating range for versatile applications.
TO-220 package compatible with standard mounting and thermal solutions. Supports pulsed currents up to 38A for transient conditions. Maximum power dissipation rating of 48W for reliable thermal handling.
Ideal for use in electronic equipment, power converters, motor drives, and automation control systems. The IRF520NPBF offers a balance of performance, reliability, and ease of integration to support modern electronics manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.7 A.
It can withstand a maximum drain-source voltage of 100 V.
The on-resistance is 200 mΩ, which helps reduce heat generation and power loss during operation.
The operating temperature range is from -55°C to 175°C, making it suitable for extreme environments.
This model comes in a TO-220 package type, which is designed for through-hole mounting.
It has a total of 3 pins.
The maximum power dissipation rating is 48 W, allowing for effective thermal management.
The typical gate charge is 25 nC at Vgs.
It is suitable for power management systems, motor drives, automation control systems, and high-frequency switching applications.
The maximum gate-source voltage is -20V to +20V.
This model features an N-channel type.
It is designed with advanced HEXFET technology for reliable performance in power electronics.
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