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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS5670 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.027Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
onsemi FDS5670 is a PowerTrench N-Channel MOSFET designed for applications requiring a continuous drain current of 10 A and a maximum drain-source voltage of 60 V. It features an 8-pin SOIC surface mount package, making it suitable for compact electronic assemblies.
This device operates in enhancement mode, providing reliable and efficient switching characteristics. The low maximum drain-source resistance of 0.027 ohms helps reduce conduction losses, improving energy efficiency in power circuits.
The MOSFET supports a wide gate-source voltage range of -20 to +20 volts, allowing flexible gate drive voltage designs. It dissipates up to 2.5 watts of power, which suits moderate power switching applications common in consumer electronics, industrial controls, and power management systems.
With an operating temperature range of -55°C to 150°C, the FDS5670 ensures stable performance across harsh and varying conditions, making it reliable for industrial and electronic components use.
Its compact SOIC package measures 5 mm by 4 mm by 1.5 mm, ideal for space-constrained circuit boards. The typical gate charge of 70 nC at the gate-source voltage supports efficient switching speeds, balancing performance with power consumption.
Features a low maximum drain-source resistance of 0.027 ohms for efficient conduction. Designed with enhancement mode channel operation for controlled switching. Supports a maximum gate-source voltage of -20 to +20 volts for versatile control.
Has a maximum power dissipation rating of 2.5 watts to handle moderate power loads. Operating temperature range from -55°C to 150°C ensures reliability in varied environments. Compact physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height suit dense circuit layouts.
Includes a typical gate charge of 70 nC at Vgs for optimized switching speed. Suitable for industrial, electronic component manufacturing, power management, and general electronics applications. Explore more semiconductor components and power management devices at EnvMart to meet diverse industrial and electronic assembly needs.
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