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onsemi PowerTrench N-Channel MOSFET, 10 A Continuous Drain Current, 60 V Drain Source Voltage, 8-Pin SOIC Package FDS5670

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.5mm
Length 5mm
Model FDS5670
Width 4mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 0.027Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 70nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Features a low maximum drain-source resistance of 0.027 ohms for efficient conduction.
  • Designed with enhancement mode channel operation for controlled switching.
  • Supports a maximum gate-source voltage of -20 to +20 volts for versatile control.
  • Has a maximum power dissipation rating of 2.5 watts to handle moderate power loads.
  • Operating temperature range from -55°C to 150°C ensures reliability in varied environments.
  • Compact physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height suit dense circuit layouts.
  • Includes a typical gate charge of 70 nC at Vgs for optimized switching speed.
  • Suitable for industrial, electronic component manufacturing, power management, and general electronics applications.

Product Description

onsemi FDS5670 is a PowerTrench N-Channel MOSFET designed for applications requiring a continuous drain current of 10 A and a maximum drain-source voltage of 60 V. It features an 8-pin SOIC surface mount package, making it suitable for compact electronic assemblies.

This device operates in enhancement mode, providing reliable and efficient switching characteristics. The low maximum drain-source resistance of 0.027 ohms helps reduce conduction losses, improving energy efficiency in power circuits.

The MOSFET supports a wide gate-source voltage range of -20 to +20 volts, allowing flexible gate drive voltage designs. It dissipates up to 2.5 watts of power, which suits moderate power switching applications common in consumer electronics, industrial controls, and power management systems.

With an operating temperature range of -55°C to 150°C, the FDS5670 ensures stable performance across harsh and varying conditions, making it reliable for industrial and electronic components use.

Its compact SOIC package measures 5 mm by 4 mm by 1.5 mm, ideal for space-constrained circuit boards. The typical gate charge of 70 nC at the gate-source voltage supports efficient switching speeds, balancing performance with power consumption.

Features a low maximum drain-source resistance of 0.027 ohms for efficient conduction. Designed with enhancement mode channel operation for controlled switching. Supports a maximum gate-source voltage of -20 to +20 volts for versatile control.

Has a maximum power dissipation rating of 2.5 watts to handle moderate power loads. Operating temperature range from -55°C to 150°C ensures reliability in varied environments. Compact physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height suit dense circuit layouts.

Includes a typical gate charge of 70 nC at Vgs for optimized switching speed. Suitable for industrial, electronic component manufacturing, power management, and general electronics applications. Explore more semiconductor components and power management devices at EnvMart to meet diverse industrial and electronic assembly needs.

onsemi PowerTrench N-Channel MOSFET, 10 A Continuous Drain Current, 60 V Drain Source Voltage, 8-Pin SOIC Package FDS5670
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A.

It supports a maximum drain-source voltage of 60 V.

This unit has compact dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height.

The maximum power dissipation rating is 2.5 watts.

It operates within a temperature range of -55°C to 150°C.

This model is packaged in an 8-pin SOIC surface mount package.

The typical gate charge at Vgs is 70 nC.

It supports a maximum gate-source voltage of -20 to +20 volts.

The maximum drain-source resistance is 0.027 ohms.

This model uses an N-channel type for its operation.

It is suitable for industrial, electronic component manufacturing, power management, and general electronics applications.

The channel mode for this MOSFET is enhancement mode.

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