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onsemi Isolated PowerTrench Dual Type P and N-Channel MOSFET, 4.5 A, 60 V, Enhancement Mode, 8-Pin SOIC FDS4559
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS4559 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 12.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- Integration of two MOSFET elements in one compact SOIC package improves power density.
- Enhancement mode channel provides efficient switching performance.
- Maximum continuous drain current of 4.5 amperes supports moderate power applications.
- Low maximum drain-source resistance of 55 milliohms reduces conduction losses.
- Max power dissipation of 2 watts allows reliable thermal handling.
- Wide operating temperature range from -55°C to 175°C suits demanding environments.
- Typical gate charge of 12.5 nanocoulombs increases switching speed efficiency.
- Isolated transistor configuration supports safe integration in circuits.
Product Description
onsemi FDS4559 is a dual Type P and Type N-channel MOSFET using Isolated PowerTrench technology, designed for efficient power switching applications in electronics and industrial systems. It supports a maximum continuous drain current of 4.5 A and withstands a drain-source voltage up to 60 V. Packaged in an 8-pin SOIC surface mount format, it allows compact board designs with improved power density.
This MOSFET operates in enhancement mode with a low maximum drain-source resistance of 55 milliohms, reducing conduction losses and increasing overall efficiency. With a typical gate charge of 12.5 nC, the device enables fast switching suitable for synchronous rectification and other power management functions.
The package dimensions are 5 mm length, 4 mm width, and 1.5 mm height, ensuring a compact footprint. Operating temperature ranges from -55°C to 175°C make it ideal for industrial, automotive, and commercial electronics requiring robust thermal performance.
The isolated transistor configuration enhances safety and simplifies system design by eliminating the need for additional isolation components. Its soft body diode characteristic helps mitigate reverse recovery losses, enabling efficient AC/DC power supply and converter applications.
Typical applications include industrial power management, telecommunications equipment, consumer electronics, and automotive systems. This MOSFET is part of the PowerTrench series known for advanced shielded-gate technology offering significant improvements in figures of merit (FOM) compared to previous generations.
Integration of two isolated MOSFETs (Type P and N) in one SOIC package. High efficiency with low gate charge and resistance. Wide operational temperature range for harsh environments. Compact surface mount footprint suitable for dense PCB layouts.
Enhanced switching performance reduces system power losses. Robust device capable of handling up to 2 watts dissipation power. Reliable for industrial, automotive, and commercial electronic circuits.
For users seeking high-performance MOSFETs with advanced features in a compact dual isolated package, the onsemi FDS4559 stands out as a reliable and efficient solution. Browse EnvMart's selection of semiconductor products for complementary components and technical support.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.5 A.
It can withstand a maximum drain-source voltage of 60 V.
The FDS4559 is packaged in an 8-pin SOIC format with dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum power dissipation for this model is 2 W.
The typical gate charge is 12.5 nanocoulombs (nC).
It operates within a temperature range from -55°C to 175°C.
This model features dual Type P and Type N-channel configurations.
The maximum drain-source resistance is 55 milliohms (mΩ).
The maximum gate-source voltage is -20V to +20V.
This MOSFET is suitable for applications in industrial power management, telecommunications equipment, consumer electronics, and automotive systems.
It features an isolated transistor configuration, which enhances safety and simplifies circuit design.
This model is part of the PowerTrench series, known for its advanced shielded-gate technology.
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