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| Country of Origin | Taiwan |
|---|---|
| Brand | Macronix |
| Height | 1.05mm |
| Length | 12.1mm |
| Cell Type | NOR |
| Model | MX29LV160DBTI-70G |
| Width | 12mm |
| Mount Type | Surface |
| Series | MX29LV |
| Maximum Operating Temperature | 85°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -40°C |
| Memory size | 16MB |
| Interface Type | Parallel |
| Pin Count | 48 |
| Maximum Supply Voltage | 3.6V |
| Minimum Supply Voltage | 2.7V |
| Organisation | 2M x 8/1M x 16 bit |
| Number of Bits per Word | 16 |
| Maximum Random Access Time | 70ns |
| Number of Words | 1M, 2M |
| Number of Banks | 4 |
Macronix MX29LV160DBTI-70G is a high-performance Parallel NOR Flash Memory chip featuring a 16MB storage capacity. It comes in a compact 48-pin Thin Small Outline Package (TSOP) designed for surface mounting on printed circuit boards, offering both space efficiency and robust connectivity.
This flash memory device operates between 2.7V and 3.6V, supporting low power consumption applications. The NOR cell architecture provides reliable, non-volatile memory storage, suited for embedded systems and industrial applications.
The memory organization supports configurations of 2M x 8 and 1M x 16 bits, allowing flexible integration depending on system requirements. The maximum random access time of 70 nanoseconds ensures rapid read speeds suitable for real-time data processing.
Designed to perform reliably in harsh environments, the device supports an operating temperature range from -40°C to 85°C. Its physical dimensions include a length of 12.1mm, width of 12mm, and height of 1.05mm, facilitating compact hardware designs.
The chip features 48 pins supporting a parallel interface, enabling high-speed data transfer. It integrates 4 memory banks which offer efficient memory management and increased operational throughput.
Macronix’s MX29LV series is known for industry-standard compatibility, although this specific model has no special industry certifications or automotive standards. It is manufactured in Taiwan, Province Of China, and is supplied as a new component.
Operates within 2.7V to 3.6V supply voltages ensuring efficient energy use. NOR cell type memory ensures persistent data retention without power. Parallel interface with 48-pin TSOP package for high-speed connectivity. Maximum random access time of 70ns for fast data read operations.
Operating temperature range accommodates harsh industrial environments. Compact dimensions support integration in space-constrained applications. Memory organized in 2M x 8 and 1M x 16 bit offering flexible application. Four banks improve memory management and multi-tasking capability.
Manufactured under stringent quality controls in Taiwan, Province Of China.
This Parallel NOR Flash Memory is ideal for industrial, electronic manufacturing, automotive electronics, and embedded systems development requiring reliable non-volatile storage with high-speed access and robust environmental tolerance.
For more advanced semiconductor products, please explore our Electronics & Electricals category on EnvMart, where precision and quality meet your industrial needs.
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